Para depositar en Docta Complutense, identifícate con tu correo @ucm.es en el SSO institucional. Haz clic en el desplegable de INICIO DE SESIÓN situado en la parte superior derecha de la pantalla. Introduce tu correo electrónico y tu contraseña de la UCM y haz clic en el botón MI CUENTA UCM, no autenticación con contraseña.

Application of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs

Simple item page
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-20T18:57:27Z
dc.date.available2023-06-20T18:57:27Z
dc.date.issued1992-03-16
dc.description©2001. All Rights Reserved. This work was supported by the Volkswagen Foundation, by the Comision Interministerial de Ciencia y Tecnologia (Project MAT 90-47) and by DGICYT-DAAD. The authors thank Wacker-Chemitronic (Doctor K. Lohnert ) for providing the samples.
dc.description.abstractA series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs as compared with n-type material. The SEAM signal generation mechanisms in GaAs are discussed.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipVolkswagen Foundation
dc.description.sponsorshipComision Interministerial de Ciencia y Tecnologia
dc.description.sponsorshipDGICYT-DAAD
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25071
dc.identifier.doi10.1063/1.107485
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.107485
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58995
dc.issue.number11
dc.journal.titleApplied Physics Letters
dc.language.isoeng
dc.page.final1359
dc.page.initial1357
dc.publisherAmer Inst Physics
dc.relation.projectIDMAT 90-47
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordSignal
dc.subject.ucmFísica de materiales
dc.titleApplication of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs
dc.typejournal article
dc.volume.number60
dcterms.references1. G. S. Cargill III, Nature 286, 691 (1980). 2. J. F. Bresse and A. C. Papadopoulo, Appl. Phys. Lett. 51, 183 (1987). 3. J. F. Bresse and A. C. Papadopoulo, J. Appl. Phys. 64, 98 (1988). 4. F. J. Rocca and D. G. Davies, J. Phys. D 22, 1894 (1989). 5. B. Mendez and J. Piqueras, Inst. Phys. Conf. Ser. No. 100,789 (1989). 6. F. Dominguez-Adame and J. Piqueras, J. Appl. Phys. 66, 275 1 (1989). 7. B. Méndez and J. Piqueras, J. Appl. Phys. 69, 2776 (1991). 8. M. Urchulutegui, J. Piqueras, and J. Llopis, J. Appl. Phys. 65, 2677 (1989). 9. N. Kultscher and L. J. Balk, Scanning Electron Microsc. I, 33 (1986). 10. C. A. Warwick and G. T. Brown, Appl. Phys. Lett. 46, 574 (1985).
dspace.entity.typePublication
relation.isAuthorOfPublication465cfd5b-6dd4-4a48-a6e3-160df06f7046
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscovery465cfd5b-6dd4-4a48-a6e3-160df06f7046

Download

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
MendezBianchi80libre.pdf
Size:
425.58 KB
Format:
Adobe Portable Document Format
Download Download

Collections

Artículos