P-to n-type Conversion in GaSb by ion-beam milling
| dc.contributor.author | Panin, G. N. | |
| dc.contributor.author | Dutta, P. S. | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Dieguez, E. | |
| dc.date.accessioned | 2023-06-20T19:05:53Z | |
| dc.date.available | 2023-06-20T19:05:53Z | |
| dc.date.issued | 1995-12-11 | |
| dc.description | (C) 1995 American Institute of Physics. G. Panin thanks Ministerio de Educacion y Ciencia for a research grant and P. S. Dutta thanks CSIR (India) for the award of Senior Research Fellowship. This work was partially supported by the Instituto Nicolas Cabrera, UAM, Madrid, Spain, through a Visiting Scientist Fellowship and by the DGICYT (Project PB93-1256), CICYT (IN93-00129 and ESP95-0148. | |
| dc.description.abstract | Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native accepters originally present in the as-grown samples. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGICYT | |
| dc.description.sponsorship | CICYT | |
| dc.description.sponsorship | Ministerio de Educación y Ciencia | |
| dc.description.sponsorship | Instituto Nicolas Cabrera, UAM, Madrid | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26820 | |
| dc.identifier.doi | 10.1063/1.115325 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.115325 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59241 | |
| dc.issue.number | 24 | |
| dc.journal.title | Applied Physics Letters | |
| dc.language.iso | eng | |
| dc.page.final | 3586 | |
| dc.page.initial | 3584 | |
| dc.publisher | Amer Inst Physics | |
| dc.relation.projectID | PB93-1256 | |
| dc.relation.projectID | IN93-00129 | |
| dc.relation.projectID | ESP95-0148 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Implanted GaSb | |
| dc.subject.keyword | Hg_(1-X)Cd_xTe | |
| dc.subject.ucm | Física de materiales | |
| dc.title | P-to n-type Conversion in GaSb by ion-beam milling | |
| dc.type | journal article | |
| dc.volume.number | 67 | |
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| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c |
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