Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates

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dc.contributor.authorPlaza, J. L.
dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, Bianchi
dc.contributor.authorPiqueras de Noriega, Javier
dc.contributor.authorCastaño, J. L.
dc.date.accessioned2023-06-20T18:59:23Z
dc.date.available2023-06-20T18:59:23Z
dc.date.issued2001-04-24
dc.description© 2001 Elsevier Science B.V. Spring Meeting of the European-Materials-Research-Society (2000. Strasbourg, Francia). This work has been supported by CICYT under the project ESP-98-1340.
dc.description.abstractIn this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial dopant concentration. The analysis have revealed the presence of inclusions which have been identified as Gd-Sb precipitates. The doped material was found to be p-type with a maximum value of the carrier density at the central region of the ingots. It has been also demonstrated that the Gd enhances the A band emission reducing the band-gap emission.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25599
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dc.identifier.doi10.1016/S0921-5107(00)00711-X
dc.identifier.issn0921-5107
dc.identifier.officialurlhttp://dx.doi.org/10.1016/S0921-5107(00)00711-X
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59057
dc.issue.number1-mar
dc.journal.titleMaterials Science and Engineering B-Solid State Materials for Advanced Technology
dc.language.isoeng
dc.page.final160
dc.page.initial157
dc.publisherElsevier Science SA
dc.relation.projectIDESP-98-1340
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordGallium-Phosphide
dc.subject.keywordInterface
dc.subject.keywordGaas
dc.subject.keywordEr
dc.subject.ucmFísica de materiales
dc.titleElectrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates
dc.typejournal article
dc.volume.number81
dspace.entity.typePublication
relation.isAuthorOfPublicationc834e5a4-3450-4ff7-8ca1-663a43f050bb
relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb
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