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Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

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dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorVincent, J.
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorBermudez, V.
dc.contributor.authorDiéguez, E.
dc.date.accessioned2023-06-20T10:44:46Z
dc.date.available2023-06-20T10:44:46Z
dc.date.issued2005-01-15
dc.description© 2005 American Institute of Physics. This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRN-CT 2001-00199 project. Support from MCYT through Project Nos. MAT2003-00455 and MAT2003-09873-C02-01 is also acknowledged..
dc.description.abstractThe radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipFifth Framework European Programme for research
dc.description.sponsorshipMCYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26123
dc.identifier.doi10.1063/1.1834727
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.1834727
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51132
dc.issue.number2
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDHPRN-CT 2001-00199
dc.relation.projectIDMAT2003-00455
dc.relation.projectIDMAT2003-09873-C02-01
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordAuger Recombination
dc.subject.keywordBulk Gasb. Photoluminescence
dc.subject.keywordDefects
dc.subject.keywordPhysics
dc.subject.keywordCells
dc.subject.keywordGaas Auger Recombination
dc.subject.keywordGaas Auger Recombination
dc.subject.keywordGaas
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
dc.typejournal article
dc.volume.number97
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