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The Selection of a radiation-tolerant DAC for the LHC (Part II: CMOS technology)

dc.book.title4ª Conferencia de Dispositivos Electrónicos, CDE 2003 [Recurso electrónico] : Calella de la Costa, Barcelona, 12 a 14 de febrero de 2003: libro de comunicaciones
dc.conference.date12/02/2003-14/02/2003
dc.conference.placeCalella de la Costa (Spain)
dc.conference.title4ª Conferencia de Dispositivos Electrónicos (CD2003)
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorLozano Rogado, Jesús
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.date.accessioned2023-06-20T13:41:31Z
dc.date.available2023-06-20T13:41:31Z
dc.date.issued2003-02-14
dc.descriptionConferencia de Dispositivos Electrónicos (CDE 2003) (4. 2003. Calella de la Costa, España). Spanish Conference on Electron Devices.
dc.description.abstractTotal dose & neutron tests on commercial CMOS digital-to-analog converters have been carried out. These results are related to those ones presented in the previous paper. This kind of devices is much more sensitive to ionizing radiation than to neutrons. That radiation changes the value of the MOSFET threshold voltage and this can put digital circuits out of action. In this case, the gradual destruction of the digital inputs was observed as a diminution of the output voltage levels. Also, the gamma radiation generates leakage currents that increase the consumption. Due to these converters tolerated less total radiation dose, their use in the LHC has been refused and the fast bipolar technology converters will be employed.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación y Ciencia
dc.description.sponsorshipCERN
dc.description.sponsorshipPortuguese Research Agency (ICCTI)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/29034
dc.identifier.isbn84-607-6770-1
dc.identifier.relatedurlhttp://www.imb-cnm.csic.es/index.php/en/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/53402
dc.language.isoeng
dc.page.final15
dc.page.initialV
dc.page.total4
dc.publication.placeBellaterra
dc.publisherInstituto de Microelectrónica de Barcelona CNM-CSIC
dc.relation.projectIDFPA2002-00912
dc.relation.projectIDK476/LHC
dc.relation.projectIDTIC98-0737
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordCOTS
dc.subject.keywordDigital-to-analog converters
dc.subject.keywordRadiation tolerance
dc.subject.keywordCMOS technology
dc.subject.keywordLHC.
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.subject.ucmCircuitos integrados
dc.subject.unesco2203.07 Circuitos Integrados
dc.titleThe Selection of a radiation-tolerant DAC for the LHC (Part II: CMOS technology)
dc.typebook part
dcterms.references[1] Anelli G., “Conception et characterisation de circuits integrés resistants aux radiations pour les detecteurs de particles du LHC en technologies CMOS submicroniques profondes”, Ph. D. Institut National Politechnique de Grenoble, 2000. http://www.cern.ch/RD49/RD49Docs/anelli/these.html [2] F. Faccio “COTS for LHC Radiation Environment: The Rules of the Game”. Proceedings of the 6th Workshop on Electronics for the LHC Experiments, Krakow, Poland, 2000, pp 50-63 [3] D.A. Johns & K. Martin "Analog integrated circuit design", John Willey, 1997 [4] G. Messenger, M. Ash “The Effects of Radiation on Electronic Systems”. New York, Van Nostrand Reinhold, 2nd Edition, 1992 [5] Dentan, M. “Radiation Effects on Electronic Components and Circuits” LHC training course, April 2000.
dspace.entity.typePublication
relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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