Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy
| dc.book.title | Optical Microstructural Characterization of Semiconductors | |
| dc.contributor.author | Hidalgo Alcalde, Pedro | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Dutta, P: S. | |
| dc.date.accessioned | 2023-06-20T21:08:45Z | |
| dc.date.available | 2023-06-20T21:08:45Z | |
| dc.date.issued | 2000 | |
| dc.description | ©Materials Research Society. Symposium on Optical Microstructural Characterization of Semiconductors held at the 1999 MRS Fall Meeting (1999. Boston) | |
| dc.description.abstract | GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enable to study the homogeneity of the diffusion treatment. Spectra recorded by current imaging tunneling spectroscopy (CITS) in the n and p sides of the junction, clearly show the respective conductive behaviour and provide information on the local surface band gaps. Results are related to the diffusion profile measured by secondary ion mass spectrometry (SIMS). | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24653 | |
| dc.identifier.isbn | 1-55899-496-3 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1557/PROC-588-239 | |
| dc.identifier.relatedurl | http://journals.cambridge.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/60813 | |
| dc.issue.number | 588 | |
| dc.page.final | 244 | |
| dc.page.initial | 239 | |
| dc.page.total | 6 | |
| dc.publisher | Materials Research Society | |
| dc.relation.ispartofseries | MRS Online Proceedings Library | |
| dc.rights.accessRights | metadata only access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Gallium Antimonide | |
| dc.subject.keyword | Doped Gasb | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy | |
| dc.type | book part | |
| dspace.entity.type | Publication | |
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