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Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests

dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorClemente Barreira, Juan Antonio
dc.contributor.authorKorkian, Golnaz
dc.contributor.authorFabero Jiménez, Juan Carlos
dc.contributor.authorMecha López, Hortensia
dc.contributor.authorVelazco, Raoul
dc.date.accessioned2023-06-16T15:16:14Z
dc.date.available2023-06-16T15:16:14Z
dc.date.issued2020
dc.description.abstractIn radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results. In this paper, simple formulae are proposed to determine the expected number of false 2-bit and 3-bit MCUs from the number of bitflips, memory size and the method used to search multiple events. These expressions are validated using Monte Carlo simulations and experimental data. Also, a technique is proposed to refine experimental data and thus partially removing possible false events. Finally, it is demonstrated that there is a physical limit to determine the cross section of memories with arbitrary accuracy from a single experiment.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.departmentDepto. de Arquitectura de Computadores y Automática
dc.description.facultyFac. de Ciencias Físicas
dc.description.facultyFac. de Informática
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.statusinpress
dc.eprint.idhttps://eprints.ucm.es/id/eprint/59495
dc.identifier.doi10.1109/TNS.2020.2977698
dc.identifier.issn0018-9499
dc.identifier.officialurlhttps://ieeexplore.ieee.org/document/9020111
dc.identifier.urihttps://hdl.handle.net/20.500.14352/6087
dc.journal.titleIEEE Transactions on Nuclear Science
dc.language.isoeng
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.projectID(FPA2017-82729-C6-4-R and TIN2017-87237)
dc.rightsAtribución-CompartirIgual 3.0 España
dc.rights.accessRightsopen access
dc.rights.urihttps://creativecommons.org/licenses/by-sa/3.0/es/
dc.subject.keywordBirtdhay Statistics
dc.subject.keywordFPGA
dc.subject.keywordSEU
dc.subject.keywordSRAM
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.subject.ucmCircuitos integrados
dc.subject.ucmElectrónica (Informática)
dc.subject.ucmElectrónica (Informática)
dc.subject.unesco2203.07 Circuitos Integrados
dc.subject.unesco2203 Electrónica
dc.subject.unesco2203 Electrónica
dc.titleInherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests
dc.typejournal article
dcterms.references[1] A. Bosser, V. Gupta, G. Tsiligiannis, A. Javanainen, H. Kettunen, H. Puchner, F. Saigné, A. Virtanen, F. Wrobel, and L. Dilillo, “Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs,” IEEE Transactions on Nuclear Science, vol. 62, no. 6, pp. 2620–2626, Dec. 2015. [2] A. L. Bosser, V. Gupta, G. Tsiligiannis, C. D. Frost, A. Zadeh, J. Jaatinen, A. Javanainen, H. Puchner, F. Saigné, A. Virtanen, F. Wrobel, and L. Dilillo, “Methodologies for the Statistical Analysis of Memory Response to Radiation,” IEEE Transactions on Nuclear Science, vol. 63, no. 4, pp. 2122–2128, Aug. 2016. [3] J. A. Clemente, G. Hubert, F. J. Franco, F. Villa, M. Baylac, H. Mecha, H. Puchner, and R. Velazco, “Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage,” IEEE Transactions on Nuclear Science, vol. 64, no. 4, pp. 2188–2195, Aug. 2017. [4] D. Falguère and S. Petit, “A Statistical Method to Extract MBU Without Scrambling Information,” IEEE Transactions on Nuclear Science, vol. 54, no. 4, pp. 920–923, Aug. 2007. [5] M. Wirthlin, D. Lee, G. Swift, and H. Quinn, “A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays,” IEEE Transactions on Nuclear Science, vol. 61, no. 6, pp. 3080–3087, Dec. 2014. [6] J. A. Clemente, F. J. Franco, F. Villa, M. Baylac, S. Rey, H. Mecha, J. A. Agapito, H. Puchner, G. Hubert, and R. Velazco, “Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs From MCUs,” IEEE Transactions on Nuclear Science, vol. 63, no. 4, pp. 2087–2094, Aug. 2016. [7] F. J. Franco, J. A. Clemente, M. Baylac, S. Rey, F. Villa, H. Mecha, J. A. Agapito, H. Puchner, G. Hubert, and R. Velazco, “Statistical Deviations From the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs,” IEEE Transactions on Nuclear Science, vol. 64, no. 4, pp. 2152–2160, Aug. 2017. [8] H. J. Tausch, “Simplified Birthday Statistics and Hamming EDAC,” IEEE Transactions on Nuclear Science, vol. 56, no. 2, pp. 474–478, Apr. 2009. [9] X. She, N. Li, R. M. Carlson, and D. O. Erstad, “Single Event Transient Suppressor for Flip-Flops,” IEEE Transactions on Nuclear Science, vol. 57, no. 4, pp. 2344–2348, Aug. 2010. [10] X. She, N. Li, and W. D. Farwell, “Tunable SEU-Tolerant Latch,” IEEE Transactions on Nuclear Science, vol. 57, no. 6, pp. 3787–3794, Dec. 2010. [11] X. She, N. Li, and D. W. Jensen, “SEU Tolerant Memory Using Error Correction Code,” IEEE Transactions on Nuclear Science, vol. 59, no. 1, pp. 205–210, Feb. 2012. [12] J. Tonfat, F. Lima Kastensmidt, L. Artola, G. Hubert, N. H. Medina, N. Added, V. A. P. Aguiar, F. Aguirre, E. L. A. Macchione, and M. A. G. Silveira, “Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA,” IEEE Transactions on Nuclear Science, vol. 64, no. 4, pp. 2161–2168, Aug. 2017. [13] D. Malagón, S. A. Bota, G. Torrens, X. Gili, J. Praena, B. Fernández, M. Macías, J. M. Quesada, C. G. Sanchez, M. C. Jiménez-Ramos, J. G. López, J. L. Merino, and J. Segura, “Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources,” Microelectronics Reliability, vol. 78, pp. 38–45, 2017. [14] F. J. Franco, J. A. Clemente, H. Mecha, and R. Velazco, “Influence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs,” IEEE Transactions on Device and Materials Reliability, vol. 19, no. 1, pp. 104–111, Mar. 2019. [15] F. J. Franco, J. A. Clemente, G. Korkian, J. C. Fabero, H. Mecha, and R. Velazco, “Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests,” in Proceedings of the European Conference on Radiation and its Effects on Components and Systems (RADECS2019), pp. 1–4, Sep. 2019. [16] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, “Similarity Analysis on Neutron- and Negative Muon-Induced MCUs in 65-nm Bulk SRAM,” IEEE Transactions on Nuclear Science, vol. 66, no. 7, pp. 1390–1397, Jul. 2019. [17] J. Bezanson, A. Edelman, S. Karpinski, and V. B. Shah, “Julia: A Fresh Approach to Numerical Computing,” SIAM Review, vol. 59, no. 1, pp. 65–98, Jan. 2017. [18] G. Gasiot, D. Giot, and P. Roche, “Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology,” IEEE Transactions on Nuclear Science, vol. 53, no. 6, pp. 3479–3486, Dec. 2006.
dspace.entity.typePublication
relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication919b239d-a500-4adb-aacf-00206a2c1512
relation.isAuthorOfPublicatione0c67aba-4539-4c62-b97b-edc92b16a12a
relation.isAuthorOfPublicatione7a0fb66-7ed6-4ed0-9b76-bc3b0fa54d04
relation.isAuthorOfPublication2363ed06-f92b-4c10-bd9a-87ac2fcce006
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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