Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests
dc.contributor.author | Franco Peláez, Francisco Javier | |
dc.contributor.author | Clemente Barreira, Juan Antonio | |
dc.contributor.author | Korkian, Golnaz | |
dc.contributor.author | Fabero Jiménez, Juan Carlos | |
dc.contributor.author | Mecha López, Hortensia | |
dc.contributor.author | Velazco, Raoul | |
dc.date.accessioned | 2023-06-16T15:16:14Z | |
dc.date.available | 2023-06-16T15:16:14Z | |
dc.date.issued | 2020 | |
dc.description.abstract | In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results. In this paper, simple formulae are proposed to determine the expected number of false 2-bit and 3-bit MCUs from the number of bitflips, memory size and the method used to search multiple events. These expressions are validated using Monte Carlo simulations and experimental data. Also, a technique is proposed to refine experimental data and thus partially removing possible false events. Finally, it is demonstrated that there is a physical limit to determine the cross section of memories with arbitrary accuracy from a single experiment. | |
dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
dc.description.department | Depto. de Arquitectura de Computadores y Automática | |
dc.description.faculty | Fac. de Ciencias Físicas | |
dc.description.faculty | Fac. de Informática | |
dc.description.refereed | TRUE | |
dc.description.sponsorship | Ministerio de Economía y Competitividad (MINECO) | |
dc.description.status | inpress | |
dc.eprint.id | https://eprints.ucm.es/id/eprint/59495 | |
dc.identifier.doi | 10.1109/TNS.2020.2977698 | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.officialurl | https://ieeexplore.ieee.org/document/9020111 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14352/6087 | |
dc.journal.title | IEEE Transactions on Nuclear Science | |
dc.language.iso | eng | |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | |
dc.relation.projectID | (FPA2017-82729-C6-4-R and TIN2017-87237) | |
dc.rights | Atribución-CompartirIgual 3.0 España | |
dc.rights.accessRights | open access | |
dc.rights.uri | https://creativecommons.org/licenses/by-sa/3.0/es/ | |
dc.subject.keyword | Birtdhay Statistics | |
dc.subject.keyword | FPGA | |
dc.subject.keyword | SEU | |
dc.subject.keyword | SRAM | |
dc.subject.ucm | Electrónica (Física) | |
dc.subject.ucm | Radiactividad | |
dc.subject.ucm | Circuitos integrados | |
dc.subject.ucm | Electrónica (Informática) | |
dc.subject.ucm | Electrónica (Informática) | |
dc.subject.unesco | 2203.07 Circuitos Integrados | |
dc.subject.unesco | 2203 Electrónica | |
dc.subject.unesco | 2203 Electrónica | |
dc.title | Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests | |
dc.type | journal article | |
dcterms.references | [1] A. Bosser, V. Gupta, G. Tsiligiannis, A. Javanainen, H. Kettunen, H. Puchner, F. Saigné, A. Virtanen, F. Wrobel, and L. Dilillo, “Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs,” IEEE Transactions on Nuclear Science, vol. 62, no. 6, pp. 2620–2626, Dec. 2015. [2] A. L. Bosser, V. Gupta, G. Tsiligiannis, C. D. Frost, A. Zadeh, J. Jaatinen, A. Javanainen, H. Puchner, F. Saigné, A. Virtanen, F. Wrobel, and L. Dilillo, “Methodologies for the Statistical Analysis of Memory Response to Radiation,” IEEE Transactions on Nuclear Science, vol. 63, no. 4, pp. 2122–2128, Aug. 2016. [3] J. A. Clemente, G. Hubert, F. J. Franco, F. Villa, M. Baylac, H. Mecha, H. Puchner, and R. Velazco, “Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage,” IEEE Transactions on Nuclear Science, vol. 64, no. 4, pp. 2188–2195, Aug. 2017. [4] D. Falguère and S. Petit, “A Statistical Method to Extract MBU Without Scrambling Information,” IEEE Transactions on Nuclear Science, vol. 54, no. 4, pp. 920–923, Aug. 2007. [5] M. Wirthlin, D. Lee, G. Swift, and H. Quinn, “A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays,” IEEE Transactions on Nuclear Science, vol. 61, no. 6, pp. 3080–3087, Dec. 2014. [6] J. A. Clemente, F. J. Franco, F. Villa, M. Baylac, S. Rey, H. Mecha, J. A. Agapito, H. Puchner, G. Hubert, and R. Velazco, “Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs From MCUs,” IEEE Transactions on Nuclear Science, vol. 63, no. 4, pp. 2087–2094, Aug. 2016. [7] F. J. Franco, J. A. Clemente, M. Baylac, S. Rey, F. Villa, H. Mecha, J. A. Agapito, H. Puchner, G. Hubert, and R. Velazco, “Statistical Deviations From the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs,” IEEE Transactions on Nuclear Science, vol. 64, no. 4, pp. 2152–2160, Aug. 2017. [8] H. J. Tausch, “Simplified Birthday Statistics and Hamming EDAC,” IEEE Transactions on Nuclear Science, vol. 56, no. 2, pp. 474–478, Apr. 2009. [9] X. She, N. Li, R. M. Carlson, and D. O. Erstad, “Single Event Transient Suppressor for Flip-Flops,” IEEE Transactions on Nuclear Science, vol. 57, no. 4, pp. 2344–2348, Aug. 2010. [10] X. She, N. Li, and W. D. Farwell, “Tunable SEU-Tolerant Latch,” IEEE Transactions on Nuclear Science, vol. 57, no. 6, pp. 3787–3794, Dec. 2010. [11] X. She, N. Li, and D. W. Jensen, “SEU Tolerant Memory Using Error Correction Code,” IEEE Transactions on Nuclear Science, vol. 59, no. 1, pp. 205–210, Feb. 2012. [12] J. Tonfat, F. Lima Kastensmidt, L. Artola, G. Hubert, N. H. Medina, N. Added, V. A. P. Aguiar, F. Aguirre, E. L. A. Macchione, and M. A. G. Silveira, “Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA,” IEEE Transactions on Nuclear Science, vol. 64, no. 4, pp. 2161–2168, Aug. 2017. [13] D. Malagón, S. A. Bota, G. Torrens, X. Gili, J. Praena, B. Fernández, M. Macías, J. M. Quesada, C. G. Sanchez, M. C. Jiménez-Ramos, J. G. López, J. L. Merino, and J. Segura, “Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources,” Microelectronics Reliability, vol. 78, pp. 38–45, 2017. [14] F. J. Franco, J. A. Clemente, H. Mecha, and R. Velazco, “Influence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs,” IEEE Transactions on Device and Materials Reliability, vol. 19, no. 1, pp. 104–111, Mar. 2019. [15] F. J. Franco, J. A. Clemente, G. Korkian, J. C. Fabero, H. Mecha, and R. Velazco, “Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests,” in Proceedings of the European Conference on Radiation and its Effects on Components and Systems (RADECS2019), pp. 1–4, Sep. 2019. [16] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, “Similarity Analysis on Neutron- and Negative Muon-Induced MCUs in 65-nm Bulk SRAM,” IEEE Transactions on Nuclear Science, vol. 66, no. 7, pp. 1390–1397, Jul. 2019. [17] J. Bezanson, A. Edelman, S. Karpinski, and V. B. Shah, “Julia: A Fresh Approach to Numerical Computing,” SIAM Review, vol. 59, no. 1, pp. 65–98, Jan. 2017. [18] G. Gasiot, D. Giot, and P. Roche, “Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology,” IEEE Transactions on Nuclear Science, vol. 53, no. 6, pp. 3479–3486, Dec. 2006. | |
dspace.entity.type | Publication | |
relation.isAuthorOfPublication | 662ba05f-c2fc-4ad7-9203-36924c80791a | |
relation.isAuthorOfPublication | 919b239d-a500-4adb-aacf-00206a2c1512 | |
relation.isAuthorOfPublication | e0c67aba-4539-4c62-b97b-edc92b16a12a | |
relation.isAuthorOfPublication | e7a0fb66-7ed6-4ed0-9b76-bc3b0fa54d04 | |
relation.isAuthorOfPublication | 2363ed06-f92b-4c10-bd9a-87ac2fcce006 | |
relation.isAuthorOfPublication.latestForDiscovery | 662ba05f-c2fc-4ad7-9203-36924c80791a |
Download
Original bundle
1 - 1 of 1
Loading...
- Name:
- Franco-InherentUncertainty.pdf
- Size:
- 422.66 KB
- Format:
- Adobe Portable Document Format