Direct observation of potential barrier formation at grain boundaries of SnO_2 ceramics

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dc.contributor.authorMaestre Varea, David
dc.contributor.authorCremades Rodríguez, Ana Isabel
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-20T10:38:07Z
dc.date.available2023-06-20T10:38:07Z
dc.date.issued2004-11
dc.description© 2004 IOP Publishing Ltd. This work has been supported by MCYT (Project MAT 2003-00455). DM acknowledges a grant from MCYT.
dc.description.abstractRemote electron beam induced current (REBIC) and cathodoluminescence (CL) modes in the scanning electron microscope (SEM) have been used to investigate SnO2 sintered samples. The study of the electrically active boundaries present in the oxide shows a characteristic peak and trough (PAT) contrast after thermal treatments in oxygen. Temperature-dependent measurements of the REBIC contrast show the presence of a shallow defect level 60 meV below the conduction band. This level is asigned to oxygen species adsorbed on the defect-rich boundaries. Evolution of REBIC contrast of the grain boundaries with excitation density enabled us to perform local measurements of minority carrier diffusion length.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMCYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/23245
dc.identifier.citation[1] Martinelli G, Carotta M C, Traversa E and Ghiotti G 1999 MRS Bull. 24 30 [2] Xu C, Tamaki J, Miura N and Yamazoe N 1991 Sensors Actuators B 3 147 [3] Bueno P R, Leite E R, Oliveira M M, Orlandi M O and Longo E 2001 Appl. Phys. Lett. 79 48 [4] WangW-X,Wang J-F, Chen H-C, SuW-B, Jiang B, Zang G-Z, Wang C-M and Qi P 2003 J. Phys. D: Appl. Phys. 36 1040 [5] Bubulac L O and Tennant W E 1988 Appl. Phys. Lett. 52 1255 [6] Bueno P R, Pianaro S A, Pereira C, Bulhoes L O S, Longo E and Varela J A 1998 J. Appl. Phys. 84 3700 [7] Bernds A, Löhnert K and Kubalek E 1984 J. Phys. Colloq. 6 181 [8] Díaz-Guerra C and Piqueras J 1999 J. Appl. Phys. 86 1874 [9] Maestre D, Cremades A and Piqueras J 2004 J. Appl. Phys. 95 3027 [10] Panin G and Yakimov E 1992 Semicond. Sci. Technol. 7 150 [11] Holt D B, Raza B and Wojcik A 1996 Mater. Sci. Eng. B 42 14 [12] Ziegler E, Siegel W, Blumtritt H and Breitenstein O 1982 Phys. Status Solidi a 72 593 [13] Cremades A and Piqueras J 1999 J. Appl. Phys. 85 1438 [14] Pandelov S, Seifert W, Kittler M and Reif J 2002 J. Phys.: Condens. Matter 14 13161 [15] Kittler M and Seifert W 1993 Phys. Status Solidi a 138 687 [16] Schockley W and Read W T 1952 Phys. Rev. 87 835 [17] Holt D B 2000 Scanning 22 28
dc.identifier.doi10.1088/0268-1242/19/11/004
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://iopscience.iop.org/0268-1242/19/11/004
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/50847
dc.issue.number11
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.final1239
dc.page.initial1236
dc.publisherIop Publishing Ltd
dc.relation.projectIDMAT 2003-00455
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordBeam-Induced-Current
dc.subject.keywordElectrical-Properties
dc.subject.keywordOxide
dc.subject.keywordSpectroscopy
dc.subject.keywordVaristors
dc.subject.keywordDefects
dc.subject.ucmFísica de materiales
dc.titleDirect observation of potential barrier formation at grain boundaries of SnO_2 ceramics
dc.typejournal article
dc.volume.number19
dspace.entity.typePublication
relation.isAuthorOfPublication43cbf291-2f80-4902-8837-ea2a9ffaa702
relation.isAuthorOfPublicationda0d631e-edbf-434e-8bfd-d31fb2921840
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscovery43cbf291-2f80-4902-8837-ea2a9ffaa702
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