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Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique

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dc.contributor.authorPlaza, J. L:
dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:55:18Z
dc.date.available2023-06-20T18:55:18Z
dc.date.issued2002-06
dc.description© 2002 Published by Elsevier Science B.V. This work has been supported by CICYT under theproje ct ESP-98 1340 and by INTAS-ESA Project number 99 01814.
dc.description.abstractNd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration dependence. Resistivity, carrier density and mobility have also been obtained showing the p-type nature of this material. Structural and compositional properties have been studied revealing some inclusions with high Nd concentration in the highest Nd-doped ingot.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCICYT
dc.description.sponsorshipINTAS-ESA
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24439
dc.identifier.doi10.1016/S0022-0248(02)01249-6
dc.identifier.issn0022-0248
dc.identifier.officialurlhttp://www.sciencedirect.com/science/article/pii/S0022024802012496
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58929
dc.issue.number3
dc.journal.titleJournal of Crystal Growth
dc.language.isoeng
dc.page.final288
dc.page.initial283
dc.publisherElsevier Science B.V.
dc.relation.projectIDESP-98 1340
dc.relation.projectID99 01814.
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordGallium-Phosphide
dc.subject.keywordLuminescence
dc.subject.keywordSilicon
dc.subject.keywordYtterbium
dc.subject.keywordGaas
dc.subject.keywordInp
dc.subject.keywordGap
dc.subject.ucmFísica de materiales
dc.titleCompositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique
dc.typejournal article
dc.volume.number241
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