Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN

Abstract

The structural and the magnetic properties of Gd-focused ion-beam-implanted GaN layers are studied. Gd^(3+) ions were uniformly implanted in molecular beam epitaxy rown GaN layers at room temperature with an energy of 300 keV at doses ranging from 2.4x10^(11) to 1.0x10^(15) cm^(-2) which corresponds to an average Gd concentration range of 2.4x10^(16)-1.0x10^(20) cm^(-3). The implanted samples were not subjected to any annealing treatment. No secondary phase related to Gd was detected by x-ray diffraction in these layers. Magnetic characterization with superconducting quantum interference device reveals a colossal magnetic moment of Gd and ferromagnetism with an order temperature above room temperature similar to that found in epitaxially grown Gd-doped GaN layers. The effective magnetic moment per Gd atom in these samples is, however, found to be an order of magnitude larger than that found in epitaxially grown layers for a given Gd concentration which indicates that the defects play an important role in giving rise to this effect.