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Cathodoluminescence microscopy and photoluminescence of defects in ZnTe

dc.contributor.authorFernández Sánchez, Paloma
dc.contributor.authorGarcía, J. A.
dc.contributor.authorRemon, A
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorMuñoz, V.
dc.contributor.authorTriboulet, R.
dc.date.accessioned2023-06-20T19:02:08Z
dc.date.available2023-06-20T19:02:08Z
dc.date.issued1998-04
dc.description1998 IOP Publishing Ltd. This work has been partially supported by the Spanish projects DGICYT PB-93-1256, GV-2205/94 and the Spanish–French collaboration HF-95-299B.
dc.description.abstractZnTe single crystals grown by the cold travelling heater method have been investigated by means of photo-and cathodoluminescence. The spectral region covered in this work ranges from 2.48 eV (500 nm) which corresponds to band-edge emission to 0.62 eV (2000 nm). Visible and infrared cathodoluminescence images have been recorded, and the influence of extended defects on the observed luminescence has been studied.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipDGICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26376
dc.identifier.doi10.1088/0268-1242/13/4/010
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://dx.doi.org/10.1088/0268-1242/13/4/010
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59143
dc.issue.number4
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.final416
dc.page.initial410
dc.publisherIop Publishing Ltd
dc.relation.projectIDPB-93-1256
dc.relation.projectIDGV-2205/94
dc.relation.projectIDHF-95-299B.
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordII-VI Compounds
dc.subject.keywordGrowth
dc.subject.keywordPurity
dc.subject.keywordVapor
dc.subject.keywordCdte
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence microscopy and photoluminescence of defects in ZnTe
dc.typejournal article
dc.volume.number13
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