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Composition-dependent electronic properties of indium-zinc-oxide elongated microstructures

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dc.contributor.authorBartolomé Vílchez, Javier
dc.contributor.authorMaestre Varea, David
dc.contributor.authorCremades Rodríguez, Ana Isabel
dc.contributor.authorAmatti, M.
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-19T13:22:30Z
dc.date.available2023-06-19T13:22:30Z
dc.date.issued2013-04
dc.description© 2012 Acta Materialia Inc. Published by Elsevier Ltd.. This work was supported by MICINN (Projects MAT-2009-07882 and CSD-2009-00013) and by UCMBSCH (Group 910146). JB acknowledges financial support from Universidad Complutense de Madrid.
dc.description.abstractMicrorods and hierarchical structures of indium-zinc-oxide (IZO) with different compositions were grown by thermal treatments of mixtures of InN and ZnO powders. In long rods, an increase in Zn content along the growth axis is revealed by energy dispersive spectroscopy. The structures obtained range from Zn-doped indium oxide with a few atomic per cent of Zn, to IZO compounds of the type Zn_kIn_2O_k+3. X-ray photoelectron spectroscopy measurements with spatial resolution show that IZO microstructures degenerate at room temperature, with carrier concentration of the order of 10^20 cm^-3. Electron accumulation has been found for undoped (1 0 0) and (1 1 1) surfaces, whereas depletion of carriers at the surface is observed in IZO samples. The Fermi level position correlates with the Zn concentration at the surface which, taking into account the surface dependence of the ionization potentials, work functions and band gaps, could lead to tunable material properties for device applications. Cathodoluminescence emission intensity is enhanced by the presence of Zn, which induces spectral changes and broadening of the emission band compared with undoped material. The results are discussed in terms of the charge neutrality level and the band structure of the material.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMICINN
dc.description.sponsorshipUCM-BSCH
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/23696
dc.identifier.doi10.1021/jp4007894
dc.identifier.issn1359-6454
dc.identifier.officialurlhttp://dx.doi.org/10.1016/j.actamat.2012.12.014
dc.identifier.relatedurlhttp://www.sciencedirect.com/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/33402
dc.issue.number6
dc.journal.titleActa Materialia
dc.language.isoeng
dc.page.final1943
dc.page.initial1932
dc.publisherPergamon-Elsevier Science LTD
dc.relation.projectIDMAT-2009-07882
dc.relation.projectIDCSD-2009-00013
dc.relation.projectIDUCMBSCH 910146
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordTransparent Conducting Oxides
dc.subject.keywordX-Ray Photoemission
dc.subject.keywordThin-Films
dc.subject.keywordOptical-Properties
dc.subject.keywordSuperlattice Structure
dc.subject.keywordZno Nanostructures
dc.subject.keywordNanowires
dc.subject.keywordIn_2o_3
dc.subject.keywordGrowth
dc.subject.keywordSurfaces
dc.subject.ucmFísica de materiales
dc.titleComposition-dependent electronic properties of indium-zinc-oxide elongated microstructures
dc.typejournal article
dc.volume.number61
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