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Effect of erbium doping on the defect structure of GaSb crystals

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dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorPlaza, J.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:55:56Z
dc.date.available2023-06-20T18:55:56Z
dc.date.issued1998-12
dc.description© 1998 IOP Publishing Ltd. This work has been supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).
dc.description.abstractGaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentrations, Er-Sb precipitates form and doping becomes less efficient in suppressing the accepters. In these samples intraionic Er luminescence is observed.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipDGES
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24713
dc.identifier.doi10.1088/0268-1242/13/12/017
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://iopscience.iop.org/0268-1242/13/12/017
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58949
dc.issue.number12
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.final1433
dc.page.initial1431
dc.publisherIOP Publishing LTD
dc.relation.projectIDPB96-0639
dc.relation.projectIDESP95-0148
dc.relation.projectID95-0086-OP
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordPhase Epitaxy
dc.subject.keywordCathodoluminescence
dc.subject.keywordPhotoluminescence
dc.subject.keywordSpectroscopy
dc.subject.keywordExcitation
dc.subject.ucmFísica de materiales
dc.titleEffect of erbium doping on the defect structure of GaSb crystals
dc.typejournal article
dc.volume.number13
dcterms.references[1] Zhao X, Hirakawa K and Ikoma T 1989 Appl. Phys. Lett. 54 712 [2] Isshiki H, Kobayashi H, Yugo S and Kimura T 1991 Appl. Phys. Lett. 58 484 [3] Neuhalfen A J and Wessels B W 1991 Appl. Phys. Lett. 59 2317 [4] Thaik M, Hömmerich U, Schwartz R N, Wilson R G and Zavada J M 1997 Appl. Phys. Lett. 71 2641 [5] Kim S, Rhee S J, Turnbull D A, Li X, Coleman J J, Bishop S G and Klein P B 1997 Appl. Phys. Lett. 71 2662 [6] Sun Y and Wu M 1995 J. Appl. Phys. 78 6691 [7] Sun Y, Wu M and Ting Y 1996 J. Cryst. Growth 85 449 [8] Panin G N, Dutta P S, Piqueras J and Di´eguez E 1995 Appl. Phys. Lett. 67 3584 [9] Méndez B, Dutta P S, Piqueras J and Di´eguez E 1995 Appl. Phys. Lett. 67 2648 [10] Hidalgo P, Méndez B, Dutta P S, Piqueras J and Diéguez E 1998 Phys. Rev. B 57 6479 [11] Méndez B and Piqueras J 1991 J. Appl. Phys. 69 2776 [12] Méndez B, Piqueras J, Dutta P S and Diéguez E 1996 Mater. Sci. Eng. B 42 38 1433
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relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb

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