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Rapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorPrado Millán, Álvaro Del
dc.contributor.authorSan Andrés Serrano, Enrique
dc.date.accessioned2023-06-20T10:44:40Z
dc.date.available2023-06-20T10:44:40Z
dc.date.issued2003-08-15
dc.description© 2003 American Institute of Physics. The authors gratefully acknowledge Dr. M. N. Blanco and Dr. E. Redondo for the fruitful collaboration with them in recent years. They also wish to express their deep gratitude to Dr. B. Selle, Dr. I Sieber, Dr. W. Bohne, Dr. J. Röhrich, Dr. Kliefoth, Dr. W. Füssel, and in general, to the people of the Hahn-Meitner Institut in Berlin, for a long friendship and fruitful collaboration. Thanks are also due to Professor F. López and Professor D. Bravo (Materials Department, Autónoma University of Madrid) for ESR measurements. Last, but no least, technical assistance received from the people of the ion implantation facility (CAI—Implantación Iónica) of the Complutense University of Madrid (P. Fernández and R. Cimas) is greatly acknowledge. The financial support of this work was partially done by the Spanish National Office for Science and Technology under Grant Nos. TIC 98-0740 and TIC 2001-1253.
dc.description.abstractWe present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiNx:H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiNx:H/semiconductor devices with Si, In0.53Ga0.47As, and InP. After RTA treatments, the electrical properties of the three different SiNx:H/semiconductor interfaces can be explained, noting the microstructural modifications that SiNx:H experiences upon annealing.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish National Office for Science and Technology
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26119
dc.identifier.doi10.1063/1.1592625
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.1592625
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51128
dc.issue.number4
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final2653
dc.page.initial2642
dc.publisherAmerican Institute of Physics
dc.relation.projectIDTIC 98-0740
dc.relation.projectIDTIC 2001-1253
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordElectron-Cyclotron-Resonance
dc.subject.keywordChemical-Vapor-Deposition
dc.subject.keywordAmorphous-Silicon Nitride
dc.subject.keywordLevel Transient Spectroscopy
dc.subject.keywordGate Quality
dc.subject.keywordInterface Characterization
dc.subject.keywordInfrared-Spectroscopy
dc.subject.keywordOptical-Properties
dc.subject.keywordN-Type
dc.subject.keywordDevices.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleRapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP
dc.typejournal article
dc.volume.number94
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