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Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

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dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorCarcelen, V.
dc.contributor.authorRodríguez Fernández, J.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T03:39:18Z
dc.date.available2023-06-20T03:39:18Z
dc.date.copyright© 2010 American Institute of Physics. This work was partially supported by the following Projects: Spanish “Ministerio de Educación y Ciencia” under Project No. ESP2006-09935; Spanish “Comunidad de Madrid” under Project No. S-0505/MAT-0279; European Commission under Project No. FP7-SEC-2007-01, and European Space Agency under Contract No. 14240/00/NL/SH. One of the authors (V.C.) is thankful to the Ministry of Education and Science, Spain for the financial support. The author N.V. is grateful to Department of Science and Technology, Govt. of India for providing the BOYSCAST fellowship.en
dc.date.issued2010-05-01
dc.description.abstractThe II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentrations (8 and 14 at. %) by the Bridgman oscillation method, in which one experiment has been carried out with a platinum (Pt) tube as the ampoule support. Pt also acts as a cold finger and reduces the growth velocity and enhances crystalline perfection. The grown single crystals have been studied with different analysis methods. The stoichiometry was confirmed by energy dispersive by x-ray and inductively coupled plasma mass spectroscopy analyses and it was found there is no incorporation of impurities in the grown crystal. The presence of Cd and Te vacancies was determined by cathodoluminescence studies. Electrical properties were assessed by I-V analysis and indicated higher resistive value (8.53 x 10_8 Ω cm) for the crystal grown with higher zinc concentration (with Cd excess) compare to the other (3.71 x 10_5 Ω cm).en
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación, Formación Profesional y Deportes (España)
dc.description.sponsorshipComunidad de Madrid
dc.description.sponsorshipComisión Europea
dc.description.sponsorshipEuropean Space Agency
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25365
dc.identifier.doi10.1063/1.3275054
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.3275054
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/44171
dc.issue.number9
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDESP2006-09935
dc.relation.projectIDS-0505/MAT-0279
dc.relation.projectIDFP7-SEC-2007-01
dc.relation.projectID14240/00/NL/SH
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordCdte
dc.subject.keywordPhotoluminescence
dc.subject.keywordDetectors
dc.subject.ucmFísica de materiales
dc.titleGrowth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analysesen
dc.typejournal article
dc.volume.number107
dc.volume.number107
dcterms.bibliographicCitation1. M. Zha, A. Zappettini, D. Calestani, L. Marchini, L. Zanotti, and C. Paorici, J. Cryst. Growth 310, 2072 (2008). 2. I. Jung, H. Krawczynski, A. Burger, M. Guo, and M. Groza, Astropart. Phys. 28, 397 (2007). 3. D. Zeng, W. Jie, T. Wang, W. Li, and J. Zhang, Mater. Sci. Eng., B 142, 144 (2007). 4. Y. Eisen and A. Short, J. Cryst. Growth 184-185, 1302 (1998). 5. G. Zha, W. Jie, T. Tan, and X. Wang, Nucl. Instrum. Methods Phys. Res. A 566, 495 (2006). 6. S. Hu and C. H. Henager, Jr., J. Cryst. Growth 311, 3184 (2009). 7. X. Zhang, Z. Zhao, P. Zhang, R. Ji, and Q. Li, J. Crys Growth 311, 286 (2009). 8. G. Yang, A. E. Bolotnikov, Y. Cui, G. S. Camarda, A. Hossain, and R. B. James, J. Cryst. Growth 311, 99 (2008). 9. E. Saucedo, O. Martinez, C. M. Ruiz, O. Vigil-Galán, I. Benito, L. Fornaro, N. V. Sochinskii, and E. Diéguez, J. Cryst. Growth 291, 416 (2006). 10. E. Saucedo, P. Rudolph, and E. Dieguez, J. Cryst. Growth 310, 2067 (2008). 11. V. Carcelen, N. Vijayan, E. Dieguez, A. Zappetini, M. Zha, S. Lamine, A. Fauler, and M. Fierderle, J. Optoelectron. Adv. Mater. 10, 3135 (2008). 12. J. Krustok, A. Lôo, and T. Piibe, J. Phys. Chem. Solids 52, 1037 (1991). 13. V. Carcelén, J. Rodriguez-Fernandez, N. Vijayan, P. Hidalgo, J. Piqueras, N. V. Sochinskii, J. M. Perez, and E. Dieguez, J. Cryst. Growth 311, 1264 (2009). 14. G. Koley, J. Liu, and K. C. Mandal, Appl. Phys. Lett. 90, 102121 (2007).
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relation.isAuthorOfPublicationc834e5a4-3450-4ff7-8ca1-663a43f050bb
relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb

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