Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates

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dc.contributor.authorPlaza, J. L.
dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:55:36Z
dc.date.available2023-06-20T18:55:36Z
dc.date.issued2000-02-14
dc.description© 2000 Elsevier Science S.A. Symposium F: Process Induced Defects in Semiconductors (1999. Estrasburgo, Francia) This work has been supported by CICYT under the project ESP-98 1340.
dc.description.abstractIn this work several changes induced by polishing, chemical etching and thermal treatment in the properties of Er- and Nd-doped GaSb substrates with different doping levels grown by the vertical Bridgman method have been studied. The analysis has revealed the formation of precipitates at the highest doping levels for both Er- and Nd-doped GaSb. Cathodoluminescence analysis shows the reduction of the defect band induced by the rare earth (RE) elements. For high dopant concentrations the precipitation phenomena reduce this effect. Thermal treatments have produced an enhancement of the p-type properties of the samples. For a dopant density of 2 x 10(19) cm(-3) this effect is more pronounced.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24651
dc.identifier.citation[1] S. Coffa, A. Polman, R.N. Schwartz, Rare Earth Doped Semiconductors II, MRS Symposium Proceedings 422, Materials Research Society, Pittsburg, 1996. [2] A.R. Zanatta, L.A.O. Nunes, Appl. Phys. Lett. 71 (25) (1997) 3679. [3] L.F. Zakharenkov, V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, M.A. Sokolova, Sov. Phys. Semicond. 15 (1981) 946. [4] V.A. Kasatkin, F.P. Kesamanly, V.G. Makarenkov, V.F. Masterov, B.E. Samorukov, Sov. Phys. Semicond. 14 (1980) 1092. [5] V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, Sov. Phys. Semicond. 15 (1981) 352. [6] H. Ennen, J. Schneider, J. Electron. Mater. 14A (1985) 115. [7] P. Hidalgo, B.Méndez, J. Piqueras, J. Plaza, E. Diéguez, Semicond. Sci. Technol. 13 (1998) 1431. [8] T.J. Zhang, S.Y. Li, Solid State Electron. 29 (1986) 775. [9] P.S. Dutta, K.S. Koteswara Rao, H.L. Bhat, K. Gopalakrihna Naik, V. Kumar, J. Cryst. Growth 155 (1995) 3702. [10] M.E. Mullen, B. Lüthi, P.S. Wang, E. Bucher, L.D. Longinotti, J.P. Maita, Phys. Rev. B 10 (1974) 1. [11] M. Ichimura, K. Higuchi, Y. Hattori, T. Wada, N. Kitamura, J. Appl. Phys. 68 (1990) 6153. [12] J.L. Plaza, P. Hidalgo, B. Méndez, J. Piqueras, J.L. Castanño, E. Diéguez, J. Cryst. Growth 198 (1999) 379. [13] B. Méndez, J. Piqueras, P.S. Dutta, E. Die´guez, Appl. Phys. Lett. 67 (1995) 2648.
dc.identifier.doi10.1016/S0921-5107(99)00391-8
dc.identifier.issn0921-5107
dc.identifier.officialurlhttp://www.sciencedirect.com/science/article/pii/S0921510799003918
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58938
dc.journal.titleMaterials Science and Engineering B-Solid State Materials for Advanced Technology
dc.language.isoeng
dc.page.final287
dc.page.initial282
dc.publisherElsevier Science SA
dc.relation.projectIDESP-98 1340
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordGallium-Phosphide
dc.subject.keywordDefects
dc.subject.ucmFísica de materiales
dc.titlePolishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates
dc.typejournal article
dc.volume.number71
dspace.entity.typePublication
relation.isAuthorOfPublicationc834e5a4-3450-4ff7-8ca1-663a43f050bb
relation.isAuthorOfPublication465cfd5b-6dd4-4a48-a6e3-160df06f7046
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb
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