Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates
| dc.contributor.author | Plaza, J. L. | |
| dc.contributor.author | Hidalgo Alcalde, Pedro | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Dieguez, E. | |
| dc.date.accessioned | 2023-06-20T18:55:36Z | |
| dc.date.available | 2023-06-20T18:55:36Z | |
| dc.date.issued | 2000-02-14 | |
| dc.description | © 2000 Elsevier Science S.A. Symposium F: Process Induced Defects in Semiconductors (1999. Estrasburgo, Francia) This work has been supported by CICYT under the project ESP-98 1340. | |
| dc.description.abstract | In this work several changes induced by polishing, chemical etching and thermal treatment in the properties of Er- and Nd-doped GaSb substrates with different doping levels grown by the vertical Bridgman method have been studied. The analysis has revealed the formation of precipitates at the highest doping levels for both Er- and Nd-doped GaSb. Cathodoluminescence analysis shows the reduction of the defect band induced by the rare earth (RE) elements. For high dopant concentrations the precipitation phenomena reduce this effect. Thermal treatments have produced an enhancement of the p-type properties of the samples. For a dopant density of 2 x 10(19) cm(-3) this effect is more pronounced. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | CICYT | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24651 | |
| dc.identifier.doi | 10.1016/S0921-5107(99)00391-8 | |
| dc.identifier.issn | 0921-5107 | |
| dc.identifier.officialurl | http://www.sciencedirect.com/science/article/pii/S0921510799003918 | |
| dc.identifier.relatedurl | http://www.sciencedirect.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58938 | |
| dc.journal.title | Materials Science and Engineering B-Solid State Materials for Advanced Technology | |
| dc.language.iso | eng | |
| dc.page.final | 287 | |
| dc.page.initial | 282 | |
| dc.publisher | Elsevier Science SA | |
| dc.relation.projectID | ESP-98 1340 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Gallium-Phosphide | |
| dc.subject.keyword | Defects | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates | |
| dc.type | journal article | |
| dc.volume.number | 71 | |
| dcterms.references | [1] S. Coffa, A. Polman, R.N. Schwartz, Rare Earth Doped Semiconductors II, MRS Symposium Proceedings 422, Materials Research Society, Pittsburg, 1996. [2] A.R. Zanatta, L.A.O. Nunes, Appl. Phys. Lett. 71 (25) (1997) 3679. [3] L.F. Zakharenkov, V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, M.A. Sokolova, Sov. Phys. Semicond. 15 (1981) 946. [4] V.A. Kasatkin, F.P. Kesamanly, V.G. Makarenkov, V.F. Masterov, B.E. Samorukov, Sov. Phys. Semicond. 14 (1980) 1092. [5] V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, Sov. Phys. Semicond. 15 (1981) 352. [6] H. Ennen, J. Schneider, J. Electron. Mater. 14A (1985) 115. [7] P. Hidalgo, B.Méndez, J. Piqueras, J. Plaza, E. Diéguez, Semicond. Sci. Technol. 13 (1998) 1431. [8] T.J. Zhang, S.Y. Li, Solid State Electron. 29 (1986) 775. [9] P.S. Dutta, K.S. Koteswara Rao, H.L. Bhat, K. Gopalakrihna Naik, V. Kumar, J. Cryst. Growth 155 (1995) 3702. [10] M.E. Mullen, B. Lüthi, P.S. Wang, E. Bucher, L.D. Longinotti, J.P. Maita, Phys. Rev. B 10 (1974) 1. [11] M. Ichimura, K. Higuchi, Y. Hattori, T. Wada, N. Kitamura, J. Appl. Phys. 68 (1990) 6153. [12] J.L. Plaza, P. Hidalgo, B. Méndez, J. Piqueras, J.L. Castanño, E. Diéguez, J. Cryst. Growth 198 (1999) 379. [13] B. Méndez, J. Piqueras, P.S. Dutta, E. Die´guez, Appl. Phys. Lett. 67 (1995) 2648. | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | c834e5a4-3450-4ff7-8ca1-663a43f050bb | |
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| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | c834e5a4-3450-4ff7-8ca1-663a43f050bb |
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