Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques
| dc.book.title | IEEE Instrumentation and Measurement Technology Conference | |
| dc.contributor.author | Miranda Pantoja, José Miguel | |
| dc.contributor.author | Muñoz San Martín, Sagrario | |
| dc.contributor.author | Sebastián Franco, José Luis | |
| dc.date.accessioned | 2023-06-20T21:08:46Z | |
| dc.date.available | 2023-06-20T21:08:46Z | |
| dc.date.issued | 2001 | |
| dc.description | © IEEE. IEEE Instrumentation and Measurement Technology Conference (IMTC/2001) (18.2001.Budapest, Hungria). | |
| dc.description.abstract | This paper presents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and Noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting the parasitic elements of the small signal equivalent circuit. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24670 | |
| dc.identifier.isbn | 0-7803-6646-8 | |
| dc.identifier.officialurl | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=928875 | |
| dc.identifier.relatedurl | http://ieeexplore.ieee.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/60814 | |
| dc.language.iso | eng | |
| dc.page.final | 533 | |
| dc.page.initial | 530 | |
| dc.page.total | 4 | |
| dc.publication.place | Budapest, Hungary | |
| dc.publisher | IEEE | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Signal. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques | |
| dc.type | book part | |
| dc.volume.number | 1-3 | |
| dcterms.references | [l] N. Rorsman, M. García, C. Karlsson, H. Zirath,“Accurate Small-Signal Modelling of HFET’s for Millimeter-Wave Applications”, IEEE Trans. on MTT, vol44 no 3, 1996, pp. 432-436. [2] G. Dambrine, A. Cappy, F. Heliodore, E. Playez, “A new method for determining the FET small signal equivalent circuit”, IEEE Trans. On MTT,vol. 36no7, 1988,pp. 1151-1159. [3] Process DOlPH from Philips Micronde Limeil. [4] R. B. Marks, “A Multiline Method for Network Analyzer Calibration”, IEEE Trans. On MTT vol. 39 (7),1991, pp. 1205-1215. [5] M. García, J. Stenarson, K. Yhland, H. Zirath,”A New Extraction Method for the Two-Parameter FET Temperature Noise Model” IEEE Trans on MTT, vol46 no 11, 1998, pp. 1679-1685. [6] M. García, N. Rorsman, K. Yhland, H. Zirath, I. Angelov, “Fast, Automatic and Accurate HFET Small-Signal Characterization”, Microwave Joumal, July 1997, pp. 102-117. | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 328f9716-2012-44f9-aacc-ef8d48782a77 | |
| relation.isAuthorOfPublication | 921de6b9-d035-46c5-8c6e-9650962c04af | |
| relation.isAuthorOfPublication | 53e43c76-7bce-46fd-9520-0edb4620c996 | |
| relation.isAuthorOfPublication.latestForDiscovery | 328f9716-2012-44f9-aacc-ef8d48782a77 |
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