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Up to fifth-order Raman scattering of InP under nonresonant conditions

dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorMartín, J.M.
dc.contributor.authorArtús, L.
dc.contributor.authorCuscó, R.
dc.date.accessioned2023-06-20T19:10:23Z
dc.date.available2023-06-20T19:10:23Z
dc.date.issued1994-10-15
dc.description© The American Physical Society. We gratefully acknowledge the Spanish Ministerio de Educación y Ciencia for financial support.
dc.description.abstractWe present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processes up to fifth order. Using an incident photon energy in the absorption region of the compound but far from any of its interband transitions, nonresonant multiphonon processes of order higher than two, which have not been reported so far in a zinc-blende-type semiconductor, have been observed in indium phosphide. In this way it has been possible to detect contributions not only from the longitudinal optical phonons but also from the transverse optical phonons in the higher-order peaks. We find a very good agreement between multiples of the TO- and LO-phonon frequencies at the zone center and the higher-order phonons measured in the experiments. The trend of strong intensity reductions observed when passing from first to second as well as from second to third order is not maintained when going from third to fourth, and from fourth to fifth order.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish Ministerio de Educación y Ciencia
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27496
dc.identifier.doi10.1103/PhysRevB.50.11552
dc.identifier.issn0163-1829
dc.identifier.officialurlhttp://dx.doi.org/10.1103/PhysRevB.50.11552
dc.identifier.relatedurlhttp://journals.aps.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59347
dc.issue.number16
dc.journal.titlePhysical Review B
dc.language.isoeng
dc.page.final11555
dc.page.initial11552
dc.publisherAmerican Physical Society
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordIndium-Phosphide
dc.subject.keywordLattice-Dynamics
dc.subject.keywordSemiconductors
dc.subject.keywordSpectrum.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleUp to fifth-order Raman scattering of InP under nonresonant conditions
dc.typejournal article
dc.volume.number50
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relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203

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