Development of CdZnTe doped with Bi for gamma radiation detection
| dc.contributor.author | Hidalgo Alcalde, Pedro | |
| dc.contributor.author | Cepeda Jiménez, C. M. | |
| dc.contributor.author | Ruano, O. A. | |
| dc.contributor.author | Carreño, F. | |
| dc.date.accessioned | 2023-06-20T03:39:35Z | |
| dc.date.available | 2023-06-20T03:39:35Z | |
| dc.date.issued | 2010 | |
| dc.description | © The Royal Society of Chemistry 2010. This work was partially supported by the following projects: ESP2006-09935, Spanish ‘‘Ministerio de Educaci_on y Ciencia’’; S-0505/MAT-0279, Spanish ‘‘Comunidad de Madrid’’; FP7- SEC-2007-01, European Commission, and Contract number 14240/00/NL/SH, European Space Agency. V.C. is thankful to the Ministry of Education and Science, Spain for financial support. N.V. is grateful to Department of Science and Technology, Govt. of India for providing the BOYSCAST fellowship. J.R.F. is thankful to the Universidad Autónoma of Madrid for financial support. | |
| dc.description.abstract | Bulk CZT crystals doped with Bi (1 x 10(19) at/cm(3)) have been grown by the Oscillatory Bridgman method, the growth velocity and the zinc concentration profile being improved by the insertion of a Pt tube acting as a cold finger. The stoichiometric uniformity was examined by energy dispersive X-ray analysis, and the zinc concentration was confirmed by inductively coupled plasma mass spectroscopy and cathodoluminescence measurements. The resistivity value was in the range of 8 x 10(8) Omega cm , being smaller for the passivated sample, which at the same time had counter device properties. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Spanish "Ministerio de Educacion y Ciencia'' | |
| dc.description.sponsorship | Spanish "Comunidad de Madrid'' | |
| dc.description.sponsorship | European Commission | |
| dc.description.sponsorship | European Space Agency | |
| dc.description.sponsorship | Department of Science and Technology, Govt. of India | |
| dc.description.sponsorship | Universidad Autónoma de Madrid | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25446 | |
| dc.identifier.doi | 10.1039/b905810a | |
| dc.identifier.issn | 1466-8033 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1039/b905810a | |
| dc.identifier.relatedurl | http://npl.csircentral.net | |
| dc.identifier.relatedurl | http://pubs.rsc.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/44184 | |
| dc.issue.number | 2 | |
| dc.journal.title | Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science | |
| dc.page.final | 510 | |
| dc.page.initial | 507 | |
| dc.publisher | Royal Soc Chemistry | |
| dc.relation.projectID | ESP2006-09935 | |
| dc.relation.projectID | S-0505/MAT-0279 | |
| dc.relation.projectID | FP7-SEC-2007-01 | |
| dc.relation.projectID | 14240/00/NL/SH | |
| dc.rights.accessRights | metadata only access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Cadmium Zinc Telluride | |
| dc.subject.keyword | Bridgman Method | |
| dc.subject.keyword | Crystals | |
| dc.subject.keyword | Cd1-Xznxte | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Development of CdZnTe doped with Bi for gamma radiation detection | |
| dc.type | journal article | |
| dc.volume.number | 12 | |
| dcterms.references | 1 (a) G. Yang, W. Jie, Q. Li, T. Wang, G. Q. Li and H. Hua, J. Cryst. Growth, 2005, 283, 431; (b) T. Wang, W. Jie, J. Zhang, G. Yang, D. Zeng, Y. Xu, S. Ma, H. Hua and K. He, J. Cryst. Growth, 2007, 304, 313; (c) M. Zha, A. Zappettini, D. Calestani, L. Marchini, L. Zanotti and C. Paorici, J. Cryst. Growth, 2008, 310, 2072; (d) I. Jung, H. Krawczynski, A. Burger, M. Guo and M. Groza, Astropart. Phys., 2007, 28, 397. 2 G. Sato, T. Takahashi, M. Sugiho, M. Kouda, T. Mitani, K. Nakazawa, Y. Okada and S. Watanabe, IEEE Trans. Nucl. Sci., 2002, 49, 1258. 3 T. E. Schlesinger, J. E. Toney, H. Yoon, E. Y. Lee, B. A. Brunett, L. Franks and R. B. James, Mater. Sci. Eng., R, 2001, 32, 103. 4 (a) Wang Xiaoqin, Jie Wanqi, Li Qiang and Gu Zhi, Mater. Sci. Semicond. Process., 2005, 8, 615; (b) Alireza Kargar, Andrew M. Jones, Walter J. McNeil, Mark J. Harrison and Douglas S. McGregor, Nucl. Instrum. Methods Phys. Res., Sect. A, 2006, 558, 497; (c) K. C. Mandal, S. H. Kang, M. Choi, A. Kargar, M. J. Harrison, D. S. McGregor, A. E. Bolotnikov, G. A. Carini, G. C. Camarda and R. B. James,IEEE Trans. Nucl. Sci., 2007, 54, 802. 5 G. A. Carini, A. E. Bolotnikov, G. S. Camarda, G. W. Wright, R. B. James and L. Li, Appl. Phys. Lett., 2006, 88, 143515. 6 (a) V. Carcelen, N. Vijayan, E. Dieguez, A. Zappettini, M. Zha, L. Sylla, A. Fauler and M. Fiederle, J. Optoelect. Adv. Mat., 2008, 10, 3135; (b) V. Carcelen, N. Vijayan, J. Rodriguez-Fernandez, P. Hidalgo, J. Piqueras, N. V. Sochinskii, J. M. Perez and E. Dieguez, J. Cryst. Growth, 2009, 311, 1264. 7 (a) E. Saucedo, O. Martinez, C. M. Ruiz, O. Vigil-Galan, I. Benito, L. Fornaro, N. V. Sochinskii and E. Dieguez, J. Cryst. Growth, 2006, 291, 416; (b) E. Saucedo, C. M. Ruiz, V. Bermudez, E. Dieguez, E. Gombia, A. Zappettini, A. Baraldi and N. V. Sochinskii, J. Appl. Phys., 2006, 100, 104901. 8 (a) W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, K. K. Meyer, E. Weigel, G. Muller-Vogt, M. Salk, E. Rupp and K. W. Benz, € Phys. Rev. B: Condens. Matter Mater. Phys., 1995, 51, 10619; (b) J. L. Reno and E. D. Jones,Phys. Rev. B: Condens. Matter Mater. Phys., 1992, 45, 1440. | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | c834e5a4-3450-4ff7-8ca1-663a43f050bb | |
| relation.isAuthorOfPublication.latestForDiscovery | c834e5a4-3450-4ff7-8ca1-663a43f050bb |