Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices
| dc.contributor.author | Parisini, A. | |
| dc.contributor.author | Tarricone, L. | |
| dc.contributor.author | Bellani, V. | |
| dc.contributor.author | Parravicini, G. B. | |
| dc.contributor.author | Díaz García, Elena | |
| dc.contributor.author | Domínguez-Adame Acosta, Francisco | |
| dc.contributor.author | Hey, R. | |
| dc.date.accessioned | 2023-06-20T19:10:38Z | |
| dc.date.available | 2023-06-20T19:10:38Z | |
| dc.date.issued | 2001-01-15 | |
| dc.description | © 2001 The American Physical Society. We are grateful to J. C. Flores, K. Fujiwara, G. Guizzetti, M. Hilke, C. Kanyinda-Malu, A. Stella, and D. Tsui for their enlightening discussions. Work in Italy has been supported by the INFM Network ‘‘Fisica e Tecnologia dei Semiconduttori III-V’’ and in Madrid by DGES under Project MAT2000-0734. | |
| dc.description.abstract | We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGES | |
| dc.description.sponsorship | INFM Network ‘‘Fisica e Tecnologia dei Semiconduttori III-V’’ | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/27531 | |
| dc.identifier.doi | 10.1103/PhysRevB.63.165321 | |
| dc.identifier.issn | 1098-0121 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1103/PhysRevB.63.165321 | |
| dc.identifier.relatedurl | http://journals.aps.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59352 | |
| dc.issue.number | 16 | |
| dc.journal.title | Physical Review B | |
| dc.language.iso | eng | |
| dc.page.initial | 165321 | |
| dc.publisher | American Physical Society | |
| dc.relation.projectID | MAT2000-0734 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Disordered Semiconductor Superlattices | |
| dc.subject.keyword | Distributed Layer Thicknesses | |
| dc.subject.keyword | Gaas/Alas Superlattices | |
| dc.subject.keyword | Bloch Oscillations | |
| dc.subject.keyword | Photoluminescence Properties | |
| dc.subject.keyword | Photocurrent Spectroscopy | |
| dc.subject.keyword | Correlated Disorder | |
| dc.subject.keyword | Optical-Absorption | |
| dc.subject.keyword | Dc Conductance | |
| dc.subject.keyword | Quantum Wells | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices | |
| dc.type | journal article | |
| dc.volume.number | 63 | |
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