Evidence of phosphorus incorporation into InGaAs/InP epilayersafter thermal annealing
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.date.accessioned | 2023-06-20T10:44:51Z | |
| dc.date.available | 2023-06-20T10:44:51Z | |
| dc.date.issued | 2003-06-01 | |
| dc.description | © 2003 American Institute of Physics. The authors wish to thank Professor J. Jiménez for his useful comments on the manuscript. This work was partially supported by DGICYT Grant No. PB97-1254 and by CICYT Grant No. TIC-98/0740. One of the authors (S. H.) acknowledges support from Departament d’Universitats i Recerca de la Generalitat de Catalunya. | |
| dc.description.abstract | We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman signal associated with InP-like modes was detected in the annealed samples. The effect is also observed in samples where the substrate was protected by a SiNx:H capping and were annealed in arsenic atmosphere, thus ruling out the possibility of a surface contamination by atmospheric phosphorus evaporated from the InP substrate.. Protruding regions. of a few microns were observed on the surface, which were identified as misoriented In1-xGaP and InP crystals by means of micro-Raman measurements. (C) 2003 American Institute of Physics. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGICYT | |
| dc.description.sponsorship | CICYT | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26140 | |
| dc.identifier.doi | 10.1063/1.1565175 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.1565175 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/51135 | |
| dc.issue.number | 11 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.page.final | 9023 | |
| dc.page.initial | 9019 | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | PB97-1254 | |
| dc.relation.projectID | TIC-98/0740 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Raman-Scattering | |
| dc.subject.keyword | Implantation Damage | |
| dc.subject.keyword | Ion-Implantation | |
| dc.subject.keyword | In(1-x)GaxAsyP(1-y) | |
| dc.subject.keyword | InP | |
| dc.subject.keyword | Si | |
| dc.subject.keyword | In(0.53)Ga(0.47)As | |
| dc.subject.keyword | Behavior | |
| dc.subject.keyword | Alloys | |
| dc.subject.keyword | Modes. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Evidence of phosphorus incorporation into InGaAs/InP epilayersafter thermal annealing | |
| dc.type | journal article | |
| dc.volume.number | 93 | |
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| dspace.entity.type | Publication | |
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| relation.isAuthorOfPublication.latestForDiscovery | a5ab602d-705f-4080-b4eb-53772168a203 |
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