Monte Carlo simulation of electron velocity in degenerate GaAs
| dc.contributor.author | Miranda Pantoja, José Miguel | |
| dc.contributor.author | Sebastián Franco, José Luis | |
| dc.date.accessioned | 2023-06-20T18:56:03Z | |
| dc.date.available | 2023-06-20T18:56:03Z | |
| dc.date.issued | 1997-06 | |
| dc.description | © 1997 IEEE. The authors wish to express their appreciation to Prof. D. Pardo and Dr. T. González from the University of Salamanca for their interesting conversations. They are also grateful to Prof. W. Ted Masselink from the Humboldt University of Berlin for his useful comments. Dr. M. Fischetti from the IBM Watson Research Center of New York is acknowledged for his highly valuable suggestions. Finally, they would like to thank H. Buck for her special attention to the grammar of the manuscript. | |
| dc.description.abstract | A calculation of the electron velocity in heavily doped GaAs has been performed. A model to account for the LO phonon-plasmon coupling effects is proposed in a full Monte Carlo simulator; we believe this is the first time this fact has been tried out, Nonequilibrium screening effects are considered in the simulation. The Pauli exclusion principle is extended to the hot electron regime by the use of the electron temperature, which is calculated self consistently from the mean energy, A direct comparison with experimental velocities is made to show the accuracy of the simulation at both 77 and 300 K. Comparisons with simpler Monte Carlo models are also presented to illustrate the influence of the different effects considered in this letter. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24745 | |
| dc.identifier.doi | 10.1109/55.585347 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1109/55.585347 | |
| dc.identifier.relatedurl | http://ieeexplore.ieee.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58953 | |
| dc.issue.number | 6 | |
| dc.journal.title | IEEE Electron Device Letters | |
| dc.language.iso | eng | |
| dc.page.final | 260 | |
| dc.page.initial | 258 | |
| dc.publisher | IEEE- Inst. Electrical Electronics Engineers Inc | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Technologically Significant Semiconductors | |
| dc.subject.keyword | Deformation Potentials | |
| dc.subject.keyword | Zincblende Structures | |
| dc.subject.keyword | Transport | |
| dc.subject.keyword | Scattering | |
| dc.subject.keyword | Diamond. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Monte Carlo simulation of electron velocity in degenerate GaAs | |
| dc.type | journal article | |
| dc.volume.number | 18 | |
| dcterms.references | [1] T. González and D. Pardo, “Physical models of ohmic contact for Monte Carlo device simulation,” Solid-State Electron., vol. 39 no. 4, pp. 555–562, 1996. [2] J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Danneville, and A. Cappy, “Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures,” submitted for publication. [3] M. Fischetti and S. E. Laux, “Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zincblende structures—Part II: Submicrometer MOSFET’s,” IEEE Trans. Electron Devices, vol. 38, pp. 650–660, Mar. 1991. [4] T. González and D. Pardo, “Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFET’s,” IEEE Trans. Electron Devices, vol. 42, pp. 605–611, Apr. 1995. [5] P. Lugli and D. K. Ferry, “Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2431–2437, Nov. 1985. [6] C. Peschke, “Interaction of electrons with coupled plasmon phonons in GaAs,” J. Appl. Phys., vol. 74, no. 1, pp. 327–334, 1993. [7] B. A. Sanborn, “Nonequilibrium total-dielectric-function approach to the electron Boltzmann equation for inelastic scattering in doped polar semiconductors,” Phys. Rev. B, vol. 51, no. 20, pp. 14247–14255, 1995. [8]----- “Electron-electron interactions, coupled plasmon–phonon modes, and mobility in n-type GaAs,” Phys. Rev. B, vol. 51, no. 20, pp. 14256–14264, 1995. [9] S. Krishnamurthy and M. Cardona, “Self-consistent calculation of intervalley deformation potentials in GaAs and Ge,” J. Appl. Phys., vol. 74, no. 3, pp. 2117–2119, 1993. [10] S. Zollner, S. Gopalan, and M. Cardona, “Microscopic theory of intervalley scattering in GaAs: k dependence of deformation potentials and scattering rates,” J. Appl. Phys, vol. 68, no. 4, pp. 1682–1693, 1990. [11] K. Kash, “Hot electron luminiscence: A comparison of GaAs and InP,” Phys. Rev. B, vol. 47, no. 3, pp. 1221–1227, 1993. [12] M. Fischetti and S. E. Laux, “Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zincblende structures—Part I: Homogeneous transport,” IEEE Trans. Electron Devices, vol. 38, pp. 634–649, Mar. 1991. [13] C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. Berlin: Springer-Verlag, 1989. [14] W. T. Masselink, “Electron velocity in GaAs: Bulk and selectively doped heterostructures,” Semicond. Sci. Technol., vol. 4, pp. 503–512, 1989. [15] J. G. Ruch and G. S. Kino, “Measurement of the velocity-field characteristic of Gallium Arsenide,” Appl. Phys. Lett., vol. 10, no. 2, pp. 40-42, 1967. [16] N. Braslau and P. S. Hauge, “Microwave measurement of the velocityfield characteristic of GaAs,” IEEE Trans. Electron Devices, vol. ED-17, pp. 616–622, Aug. 1970. [17] W. T. Masselink, personal communication. | |
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| relation.isAuthorOfPublication | 53e43c76-7bce-46fd-9520-0edb4620c996 | |
| relation.isAuthorOfPublication.latestForDiscovery | 328f9716-2012-44f9-aacc-ef8d48782a77 |
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