Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire

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dc.contributor.authorMonteiro, T.
dc.contributor.authorPereira, E.
dc.contributor.authorCorreia, M. R.
dc.contributor.authorXavier, C.
dc.contributor.authorHofmann, D. M.
dc.contributor.authorMeyer, B. K.
dc.contributor.authorFischer, S.
dc.contributor.authorCremades Rodríguez, Ana Isabel
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-20T18:53:02Z
dc.date.available2023-06-20T18:53:02Z
dc.date.issued1997-06
dc.description© 1997 Elsevier Science B.V. All rights reserved. International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) (1996. Praga). C. Xavier thanks JNICT for a grant BM/6613/95. This work was partially supported by JNICT Project0 no. BIC/C/CTM/1925/95.
dc.description.abstractMid-band-gap emissions in GaN epilayers grown on 6H-SiC and sapphire are studied by time-resolved spectroscopy (TRS). The yellow luminescence peaking at ca. 1.2 eV at low-temperature shifts to higher energies with increasing temperature. The presence of emission with the same characteristics in samples grown on different substrates and by different processes indicates that the defects responsible for the emission are of intrinsic nature but dependent on the cubic or hexagonal habit of the crystals. TRS are compared with cathodoluminescence (CL) in a scanning electron microscope (SEM) and optically detected magnetic resonance (ODMR) data.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipJNICT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/23593
dc.identifier.doi10.1016/S0022-2313(96)00328-6
dc.identifier.issn0022-2313
dc.identifier.officialurlhttp://www.sciencedirect.com/science/article/pii/S0022231396003286
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58852
dc.journal.titleJournal of Luminescence
dc.language.isoeng
dc.page.final700
dc.page.initial696
dc.publisherElsevier Science BV
dc.relation.projectIDBM/6613/95
dc.relation.projectIDBIC/C/CTM/1925/95.
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordGaN: Yellow Luminescence
dc.subject.ucmFísica de materiales
dc.titleBroad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire
dc.typejournal article
dc.volume.number72-4
dcterms.references[l] D. Volm, K. Oettinger, T. Sreibl, D. Kovalev, M. Ben-Chorin, J. Diener, B.K. Meyer, J. Majewski, L. Eckey, A. Hoffmann, H. Amano, I. Akasaki, K. Hiramatsu and T. Dtechprohm, Phys. Rev. B 53 (1996) 16543. [2] S. Strite and H. MorkoC, J. Vat. Sci. Technol. B 10 (1992) 1237. [3] D.M. Hofmann, D. Kovalev, G. Steude, B.K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprom, H. Amano and I. Akasaki, Phys. Rev. B 52 (1995) 16702. [4] D.M. Hofmann, D. Kovalev, G. Steude, D. Volm, B.K. Meyer, C. Xavier, T. Monteiro, E. Pereira, E.N. Mokov, A. Amano and I. Akasaki, Mat. Res. Sot. Symp. Boston, Vol. 395 (1996) 619. [5] A. Cremades, J. Piqueras, C. Xavier, T. Monteiro, E. Pereira, B.K. Meyer, D.M. Hofmann and S. Fischer, Mater. Sci. Eng. B42 (1996) 230.
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