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Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering

dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorHernández Rojas, J. L.
dc.contributor.authorLucía Mulas, María Luisa
dc.contributor.authorSánchez Quesada, Francisco
dc.contributor.authorSantamaría Sánchez-Barriga, Jacobo
dc.date.accessioned2023-06-20T19:08:50Z
dc.date.available2023-06-20T19:08:50Z
dc.date.issued1992-04-13
dc.description© American Institute of Physics. The authors would like to express their acknowledgments to S. García-Martín (XRD facilities) and J. Carabe (Optical Measurement facilities).
dc.description.abstractCuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27132
dc.identifier.doi10.1063/1.107140
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.107140
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59311
dc.issue.number15
dc.journal.titleApplied physics Letters
dc.language.isoeng
dc.page.final1877
dc.page.initial1875
dc.publisherAmer Inst Physics
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordPhysics
dc.subject.keywordApplied.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleChalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
dc.typejournal article
dc.volume.number60
dcterms.references1) W.E. Devaney, W.S. Chen, J.M. Stewart, and R.A. Mickelsen, IEEE Trans. Electron. Devices, 37, 428 (1990). 2) I. Mártil, J. Santamaría, E. Iborra, G. González-Díaz, and F. Sánchez-Quesada, J. Appl. Phys., 62, 4163 ( 1987). 3) F. Sánchez-Quesdad, C. Case, G. González-Díaz, I. Mártil, J. Santamaría, E. Iborra, R. Beaulieu, and J.J. Loferski, Appl. Surf. Sci., 33/34, 844 (1988). 4) I. Mártil, G. González-Díaz, J. Santamaría, M.L. Lucía, J.L. Hernández-Rojas, and F. Sánchez-Quesada, J. Mater. Sci. Lett., 19, 237 (1990). 5) I. Mártil, J. Santamaría, G. González-Díaz, and F. Sánchez-Quesada, J. Appl. Phys., 68, 189 (1990). 6) D.S. Albin, J.R. Tuttle, G.D. Mooney, J.J. Carapella, A. Duda, A. Mason, and R. Noufi, Proceedings of the 2lst IEEE Photovoltaic Solar Energy Conference (IEEE, New York, 1990), 562. 7) D. Albin, R. Noufi, J. Tuttle, J. Goral, and S.H. Risbud, J. Appl. Phys., 64, 4903 (1988). 8) D.K. Suri, K.C. Nagpal, and G.K. Chadha, J. Appl. Crystallogr., 22, 578 (1989). 9) T. Tinoco, C. Rincón, M. Quintero, and G. Sánchez Pérez, Phys. Status Solidi A, 124, 427 (1991). 10) J.L. Hernández-Rojas, M.L. Lucía, I. Mártil, G. González-Díaz, J. Santamaría, and F. Sánchez-Quesada. Appl. Opt., (in press).
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