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Scanning tunneling spectroscopy of transition-metal-doped GaSb

dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorDutta, P: S.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:55:38Z
dc.date.available2023-06-20T18:55:38Z
dc.date.issued1999-10-15
dc.description©1999 The American Physical Society. This work was supported by DGES (PB96-0639) and by CICYT (ESP98-1340) (MAT98-1306E).
dc.description.abstractV- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples show a nearly metallic behavior. The surface band gaps in the GaSb matrix have been found to depend on the dopant. [S0163-1829(99)06439-5].
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipDGES
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24654
dc.identifier.doi10.1103/PhysRevB.60.10613
dc.identifier.issn0163-1829
dc.identifier.officialurlhttp://prb.aps.org/abstract/PRB/v60/i15/p10613_1
dc.identifier.relatedurlhttp://prb.aps.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58939
dc.issue.number15
dc.journal.titlePhysical review B
dc.language.isoeng
dc.page.final1615
dc.page.initial1613
dc.publisherAmerican Physical Society
dc.relation.projectIDPB96-0639
dc.relation.projectIDESP98-1340
dc.relation.projectIDMAT98-1306E
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordGallium Antimonide
dc.subject.ucmFísica de materiales
dc.titleScanning tunneling spectroscopy of transition-metal-doped GaSb
dc.typejournal article
dc.volume.number60
dcterms.references1 P. S. Dutta, H. L. Baht, and V. Kumar, J. Appl. Phys. 81, 5821 (1997). 2 P. Hidalgo, B. Méndez, P. S. Dutta, J. Piqueras, and E. Dieguez, Phys. Rev. B 57, 6479 (1998). 3 E. I. Georgitsé, L. M. Gutsulyak, V. I. Ivanov-Omskil, V. A. Smirnov, and Sh. U. Yuldashev, Fiz. Tekh. Poluprovodn. 25,1960 (1991) @Sov. Phys. Semicond. 25, 1180 (1991). 4 R. J. Hammers, R. M. Tromp, and J. E. Demuth, Phys. Rev. Lett. 56, 1972 (1986). 5 R. M. Feenstra, Surf. Sci. 299/300, 965 (1994). 6 R. M. Feenstra, J. A. Stroscio, and A. P. Fein, Surf. Sci. 181, 295 (1987). 7 B. Méndez, J. Piqueras, P. S. Dutta, and E. Dieguez, Mater. Sci. Eng., B B42, 38 (1996).
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