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ac hopping admittance in spinel manganate negative temperature coefficient thermistor electroceramics

dc.contributor.authorSchmidt, Rainer
dc.contributor.authorBrinkman, Andrew W.
dc.date.accessioned2023-06-20T10:59:09Z
dc.date.available2023-06-20T10:59:09Z
dc.date.issued2008-06-01
dc.description© 2008 American Institute of Physics. The authors wish to thank Michael Petty for allowing use of the ac impedance spectroscopy facility. Thanks to Finlay Morrison and Ian Terry for useful discussions concerning impedance spectroscopy data analysis. Thanks to Andreas Roosen and Alfons Stiegelschmitt for the guidance provided in developing thick film samples.
dc.description.abstractIn this work, the ac admittance of a thick film nickel manganate spinel negative temperature coefficient thermistor ceramic system containing a glass phase is investigated. The dominating relaxation process is a grain boundary (GB) effect and has been investigated comprehensively. We present double-logarithmic plots of the specific admittance σ' vs ω and (σ'/σ_(dc)) vs ω, and specific impedance z vs −z"/ω and [(ρ_(dc)/z')−1] vs ω, in order to characterize GB charge transport. Using the complex admittance notation (σ*), an unusually low Jonscher exponent of frequency ~0.007 was obtained and the GB relaxation displayed close to ideal behavior.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/33088
dc.identifier.doi10.1063/1.2938029
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.2938029
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51556
dc.issue.number11
dc.journal.titleJournal of applied physics
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordConductivity
dc.subject.keywordImpedance.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleac hopping admittance in spinel manganate negative temperature coefficient thermistor electroceramics
dc.typejournal article
dc.volume.number103
dcterms.references1) J. A. Becker, C. B. Green, G. L. Pearson, Bell Syst. Tech. J., 26, 170 (1947). 2) R. Schmidt, A. Basu, A. W. Brinkman, Phys. Rev. B, 72, 115101 (2005). 3) R. Schmidt, A. Basu, A. W. Brinkman, Z. Klusek, P. K. Datta, Appl. Phys. Lett., 86, 073501 (2005). 4) B. I. Shklovskii, A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984). 5) U. Weiss, Quantum Dissipative Systems (World Scientific, Singapore, 1999). 6) R. Schmidt, A. W. Brinkman, Adv. Funct. Mater., 17, 3170 (2007). 7) J. T. S. Irvine, D. C. Sinclair, A. R. West, Adv. Mater., (Weinheim, Ger.) 2, 132 (1990). 8) Impedance Spectroscopy, edited by J. R. Macdonald (Wiley, New York, 1987). 9) A. K. Jonscher, J. Non-Cryst. Solids, 8–10, 293 (1972). 10) S. Summerfield, Philos. Mag. B, 52, 9 (1985). 11) S. Abboudy, P. Fozooni, R. Mansfield, M. J. Lea, Philos. Mag. Lett., 57, 277 (1988). 12) M. Pollak, T. H. Geballe, Phys. Rev., 122, 1742 (1961). 13) R. Schmidt, A. Basu, A. W. Brinkman, Z. Klusek, W. Kozlowski, P. K. Datta, A. Stiegelschmitt, A. Roosen, Appl. Surf. Sci., 252, 8760 (2006). 14) R. Schmidt, A. W. Brinkman, J. Eur. Ceram. Soc., 25, 3027 (2005). 15) R. Schmidt, in Ceramic Materials Research Trends, edited by P. B. Lin (Nova Science, Hauppauge, 2007). 16) J. C. C. Abrantes, J. A. Labrincha, J. R. Frade, Mater. Res. Bull., 35, 727 (2000). 17) S. H. Liu, Phys. Rev. Lett., 55, 529 (1985).
dspace.entity.typePublication
relation.isAuthorOfPublication4d468566-fa66-4e1c-8463-382517edca6e
relation.isAuthorOfPublication.latestForDiscovery4d468566-fa66-4e1c-8463-382517edca6e

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