Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs
dc.contributor.author | Franco Peláez, Francisco Javier | |
dc.contributor.author | Clemente Barreira, Juan Antonio | |
dc.contributor.author | Baylac, Maud | |
dc.contributor.author | Rey, Solenne | |
dc.contributor.author | Villa, Francesca | |
dc.contributor.author | Mecha López, Hortensia | |
dc.contributor.author | Agapito Serrano, Juan Andrés | |
dc.contributor.author | Puchner, Helmut | |
dc.contributor.author | Hubert, Guillaume | |
dc.contributor.author | Velazco, Raoul | |
dc.date.accessioned | 2023-06-17T22:01:00Z | |
dc.date.available | 2023-06-17T22:01:00Z | |
dc.date.issued | 2017-08-01 | |
dc.description.abstract | This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments). | |
dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
dc.description.department | Depto. de Arquitectura de Computadores y Automática | |
dc.description.faculty | Fac. de Ciencias Físicas | |
dc.description.faculty | Fac. de Informática | |
dc.description.refereed | TRUE | |
dc.description.sponsorship | Ministerio de Ciencia e Innovación (MICINN) | |
dc.description.sponsorship | Universidad Complutense de Madrid - Banco Santander | |
dc.description.sponsorship | Becas "José Castillejo" | |
dc.description.status | pub | |
dc.eprint.id | https://eprints.ucm.es/id/eprint/43874 | |
dc.identifier.doi | 10.1109/TNS.2017.2726938 | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14352/17931 | |
dc.issue.number | 8 | |
dc.journal.title | IEEE Transactions on Nuclear Science | |
dc.language.iso | eng | |
dc.page.final | 2160 | |
dc.page.initial | 2152 | |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | |
dc.relation.projectID | TIN2013-40968-P | |
dc.relation.projectID | FPA2015-69120-C6-5R | |
dc.rights.accessRights | open access | |
dc.subject.keyword | Multiple cell upsets | |
dc.subject.keyword | single bit upsets | |
dc.subject.keyword | single events | |
dc.subject.keyword | soft errors | |
dc.subject.keyword | SRAMs | |
dc.subject.ucm | Electrónica (Física) | |
dc.subject.ucm | Física nuclear | |
dc.subject.ucm | Ordenadores | |
dc.subject.ucm | Circuitos integrados | |
dc.subject.unesco | 2207 Física Atómica y Nuclear | |
dc.subject.unesco | 1203 Ciencia de Los Ordenadores | |
dc.subject.unesco | 2203.07 Circuitos Integrados | |
dc.title | Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs | |
dc.type | journal article | |
dc.volume.number | 64 | |
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