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Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs

dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorClemente Barreira, Juan Antonio
dc.contributor.authorBaylac, Maud
dc.contributor.authorRey, Solenne
dc.contributor.authorVilla, Francesca
dc.contributor.authorMecha López, Hortensia
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.contributor.authorPuchner, Helmut
dc.contributor.authorHubert, Guillaume
dc.contributor.authorVelazco, Raoul
dc.date.accessioned2023-06-17T22:01:00Z
dc.date.available2023-06-17T22:01:00Z
dc.date.issued2017-08-01
dc.description.abstractThis paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments).
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.departmentDepto. de Arquitectura de Computadores y Automática
dc.description.facultyFac. de Ciencias Físicas
dc.description.facultyFac. de Informática
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Ciencia e Innovación (MICINN)
dc.description.sponsorshipUniversidad Complutense de Madrid - Banco Santander
dc.description.sponsorshipBecas "José Castillejo"
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/43874
dc.identifier.doi10.1109/TNS.2017.2726938
dc.identifier.issn0018-9499
dc.identifier.urihttps://hdl.handle.net/20.500.14352/17931
dc.issue.number8
dc.journal.titleIEEE Transactions on Nuclear Science
dc.language.isoeng
dc.page.final2160
dc.page.initial2152
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.projectIDTIN2013-40968-P
dc.relation.projectIDFPA2015-69120-C6-5R
dc.rights.accessRightsopen access
dc.subject.keywordMultiple cell upsets
dc.subject.keywordsingle bit upsets
dc.subject.keywordsingle events
dc.subject.keywordsoft errors
dc.subject.keywordSRAMs
dc.subject.ucmElectrónica (Física)
dc.subject.ucmFísica nuclear
dc.subject.ucmOrdenadores
dc.subject.ucmCircuitos integrados
dc.subject.unesco2207 Física Atómica y Nuclear
dc.subject.unesco1203 Ciencia de Los Ordenadores
dc.subject.unesco2203.07 Circuitos Integrados
dc.titleStatistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs
dc.typejournal article
dc.volume.number64
dcterms.references[1] R. W. Hamming, “Error Detecting and Error Correcting Codes,” Bell Syst. Tech. J, vol. 29, no. 2, pp. 147–160, Apr. 1950. [2] S. P. Buchner, F. Miller, V. Pouget, and D. P. McMorrow, “Pulsed-Laser Testing for Single-Event Effects Investigations,” IEEE Tran. Nucl. Sci., vol. 60, no. 3, pp. 1852–1875, Jun. 2013. [3] A. Manuzzato, S. Gerardin, A. Paccagnella, L. Sterpone, and M. Violante, “On the Static Cross Section of SRAM-Based FPGAs,” in 2008 IEEE Radiation Effects Data Workshop, Jul. 2008, pp. 94–97. [4] J. A. Clemente, F. J. Franco, F. Villa, M. Baylac, S. Rey, H. Mecha, J. A. Agapito, H. Puchner, G. Hubert, and R. Velazco, “Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs,” IEEE Tran. Nucl. Sci., vol. 63, no. 4, pp. 2087–2094, Aug. 2016. [5] D. Falguere and S. Petit, “A Statistical Method to Extract MBU Without Scrambling Information,” IEEE Tran. Nucl. Sci., vol. 54, no. 4, pp. 920–923, Aug. 2007. [6] G. Tsiligiannis, L. Dilillo, V. Gupta, A. Bosio, P. Girard, A. Virazel, H. Puchner, A. Bosser, A. Javanainen, A. Virtanen, C. Frost, F. Wrobel, L. Dusseau, and F. Saigné, “Dynamic Test Methods for COTS SRAMs,” IEEE Tran. Nucl. Sci., vol. 61, no. 6, pp. 3095–3102, Dec. 2014. [7] A. L. Bosser, V. Gupta, G. Tsiligiannis, C. D. Frost, A. Zadeh, J. Jaatinen, A. Javanainen, H. Puchner, F. Saigné, A. Virtanen, F. Wrobel, and L. Dilillo, “Methodologies for the Statistical Analysis of Memory Response to Radiation,” IEEE Tran. Nucl. Sci., vol. 63, no. 4, pp. 2122–2128, Aug. 2016. [8] M. Wirthlin, D. Lee, G. Swift, and H. Quinn, “A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays,” IEEE Tran. Nucl. Sci., vol. 61, no. 6, pp. 3080–3087, Dec. 2014. [9] A. Hands, P. Morris, C. Dyer, K. Ryden, and P. Truscott, “Single Event Effects in Power MOSFETs and SRAMs Due to 3 MeV, 14 MeV and Fission Neutrons,” IEEE Tran. Nucl. Sci., vol. 58, no. 3, pp. 952–959, Jun. 2011. [10] F. J. Franco, J. A. Clemente, M. Baylac, S. Rey, F. Villa, H. Mecha, J. A. Agapito, H. Puchner, G. Hubert, and R. Velazco, “Some Properties of only-SBUs Scenarios in SRAMs Applied to the Detection of MCUs,” in 2016 IEEE Conference on Radiation Effects on Components and Systems (RADECS), Sep. 2016, p. (pending of publication). [11] J. Bezanson, A. Edelman, S. Karpinski, and V. B. Shah, “Julia: A Fresh Approach to Numerical Computing,” Online: http://arxiv.org/abs/1411.1607, Nov. 2014. [12] F. Villa, M. Baylac, S. Rey, O. Rossetto, W. Mansour, P. Ramos, R. Velazco, and G. Hubert, “Accelerator-Based Neutron Irradiation of Integrated Circuits at GENEPI2 (France),” in 2014 IEEE Radiation Effects Data Workshop (REDW), Jul. 2014, pp. 1–5. [13] F. Villa, M. Baylac, A. Billebaud, P. Boge, T. Cabanel, E. Labussière, O. Méplan, and S. Rey, “Multipurpose Applications of the Accelerator-Based Neutron Source GENEPI2,” Nuovo Cimento C-Colloquia and Communications in Physics, no. 38, Article ID: 182, pp. 1–8, May 2016. [14] S. Craw, Manhattan Distance. Boston, MA: Springer US, 2010, pp. 639–639. [Online]. Available: http://dx.doi.org/10.1007/978-0-387-30164-8_506 [15] J. L. Autran, D. Munteanu, P. Roche, and G. Gasiot, “Real-Time Soft-Error Rate Measurements: A Review,” Microelectron. Reliab., vol. 54, no. 8, pp. 1455–1476, Aug. 2014. [16] J. Schiller, M. R. Spiegel, and R. A. Srivanasan, Schaums Outline of Theory and problems of Statistics, 3rd ed. McGraw-Hill, Aug. 2008. [17] J. A. Clemente, G. Hubert, F. J. Franco, F. Villa, M. Baylac, H. Mecha, H. Puchner, and R. Velazco, “Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage,” IEEE Tran. Nucl. Sci., vol. (pending of publication), 2017. [18] J. A. Maestro and P. Reviriego, “A Method to Eliminate the Event Accumulation Problem from a Memory Affected by Multiple Bit Upsets,” Microelectron. Reliab., vol. 49, no. 7, pp. 707–715, Jul. 2009.
dspace.entity.typePublication
relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication919b239d-a500-4adb-aacf-00206a2c1512
relation.isAuthorOfPublication2363ed06-f92b-4c10-bd9a-87ac2fcce006
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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