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Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment

dc.contributor.authorDutta, P. S.
dc.contributor.authorSreedhar, A. K.
dc.contributor.authorBhat, H. L.
dc.contributor.authorDubey, G. C.
dc.contributor.authorKumar, V.
dc.contributor.authorDieguez, E.
dc.contributor.authorPal, U.
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-20T19:04:36Z
dc.date.available2023-06-20T19:04:36Z
dc.date.issued1996-03-15
dc.description© 1996 American Institute of Physics One of the authors (P.S.D.) would like to thank CSIR (India) for the award of a senior research fellowship. U.P. gratefully acknowledges MEC (Spain) for the postdoctoral fellowship. This work was partially supported by the Universidad Autonoma de Madrid, Spain, through a visiting scientist fellowship and by DGICYT Project Nos. PB93-1256 and ESP95-014
dc.description.abstractPassivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clearly show passivation of defects on the surface as well as in the bulk region. The passivation of various recombination centers in the bulk is attributed to the formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma a-Si:H acts as a protective cap layer and prevents surface degradation which is usually encountered by bare exposure to hydrogen plasma. An enhancement in luminescence intensity up to 20 times is seen due to the passivation of nonradiative recombination centers. The passivation efficiency is found to improve with an increase in a-Si:H deposition temperature. The relative passivation efficiency of donors and acceptors by hydrogen in undoped and Te-compensated p-GaSb has been evaluated by CL and by the temperature dependence of photoluminescence intensities. Most notably, effective passivation of minority dopants in tellurium compensated p-GaSb is evidenced for the first time.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipUniversidad Autonoma de Madrid, Spain
dc.description.sponsorshipDGICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26764
dc.identifier.doi10.1063/1.361220
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.361220
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59212
dc.issue.number6
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final3252
dc.page.initial3246
dc.publisherAmerican Institute of Physics
dc.relation.projectIDPB93-1256
dc.relation.projectIDESP95-0148
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordOptical-Properties
dc.subject.keywordGaas
dc.subject.keywordCathodoluminescence
dc.subject.keywordRecombination
dc.subject.keywordCenters
dc.subject.keywordFilms
dc.subject.keywordDrift
dc.subject.ucmFísica de materiales
dc.titlePassivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment
dc.typejournal article
dc.volume.number79
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