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Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography

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dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorVolciuc, O.
dc.contributor.authorPopa, V.
dc.contributor.authorTiginyanu, I. M.
dc.date.accessioned2023-06-20T10:44:10Z
dc.date.available2023-06-20T10:44:10Z
dc.date.issued2006-07-15
dc.description© 2006 American Institute of Physics. This work has been supported by MEC through Project No. MAT2003-00455, CAM through Project GR/MAT 630-04, U.S. Civilian Research and Development Foundation under Grant Nos. MR2-995 and MOR2-1033-CH-03, as well as by the Supreme Council for Research and Technological Development of Moldova.
dc.description.abstractCathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic CL images and CL spectra reveal an enhancement of several defect-related emission bands in a 10 mu m wide area around each microstructure. In addition, columnar nanostructures and nanoetch pits were found in the PEC etched areas. CL emission of the nanocolumns is dominated by free electron to acceptor transitions, while excitonic luminescence prevails in the rest of the etched GaN layers. Investigation of the sidewalls of the microstructures reveals that a CL emission band centered at about 3.41 eV, attributed to excitons bound to structural defects, is effectively suppressed after PEC etching only in the observed nanocolumns.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMEC
dc.description.sponsorshipCAM
dc.description.sponsorshipU.S. Civilian Research and Development Foundation
dc.description.sponsorshipSupreme Council for Research and Technological Development of Moldova
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25989
dc.identifier.doi10.1063/1.2214210
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.2214210
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51108
dc.issue.number2
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDMAT2003-00455
dc.relation.projectIDGR/MAT 630-04
dc.relation.projectIDMR2-995
dc.relation.projectIDMOR2-1033-CH-03
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordMolecular-Beam Epitaxy
dc.subject.keywordDamage-Induced Masking
dc.subject.keywordVapor-Phase-Epitaxy
dc.subject.keywordLuminescence Properties
dc.subject.keywordFreestanding Gan
dc.subject.keywordPhotoluminescence
dc.subject.keywordDefects
dc.subject.keywordGallium
dc.subject.keywordIllumination
dc.subject.keywordTransitions
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
dc.typejournal article
dc.volume.number100
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