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Resistive switching in manganite/graphene hybrid planar nanostructures

dc.contributor.authorRocci, Mirko
dc.contributor.authorTornos Castillo, Javier
dc.contributor.authorRivera Calzada, Alberto Carlos
dc.contributor.authorSefrioui, Zouhair
dc.contributor.authorClement, Marta
dc.contributor.authorIborra, Enrique
dc.contributor.authorLeón Yebra, Carlos
dc.contributor.authorSantamaría Sánchez-Barriga, Jacobo
dc.date.accessioned2023-06-19T14:55:14Z
dc.date.available2023-06-19T14:55:14Z
dc.date.issued2014-03-10
dc.description© 2014 AIP Publishing LLC. We acknowledge financial support by Spanish MICINN through Grants MAT2011-27470-C02 and Consolider Ingenio 2010-CSD2009-00013 (Imagine), by CAM through grant S2009/MAT-1756 (Phama). We thank Patrizia De Marco, Francesco Perrozzi, and Luca Ottaviano for their help and guidance in preparing the graphene samples. We thank Susana Álvarez and Alicia de Andrés for help with preliminary Raman spectroscopy experiments
dc.description.abstractWe report on the fabrication and magnetotransport characterization of hybrid graphene-based nanodevices with epitaxial nanopatterned La_(0.7)Sr_(0.3)MnO_(3) manganite electrodes grown on SrTiO_(3)(100). The few-layer graphene was deposited onto the predefined manganite nanowires by using a mechanical transfer technique. These nanodevices exhibit resistive switching and hysteretic transport as measured by current-voltage curves. The resistance can be reversibly switched between high and low states, yielding a consistent non-volatile memory response. The effect is discussed in terms of changes in the concentration of oxygen vacancies at the space charge region of the Schottky barriers building at the contacts.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinsiterio de Ciencia e Innovación (MICINN)
dc.description.sponsorshipConsolider Ingenio 2010
dc.description.sponsorshipComunidad de Madrid
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/31336
dc.identifier.doi10.1063/1.4868426
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.4868426
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/34777
dc.issue.number10
dc.journal.titleApplied physics letters
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDMAT2011-27470-C02
dc.relation.projectID2010-CSD2009-00013 (Imagine)
dc.relation.projectIDPHAMA-CM (S2009/MAT-1756)
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordSpin transport
dc.subject.keywordGraphene
dc.subject.keywordSingle.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleResistive switching in manganite/graphene hybrid planar nanostructures
dc.typejournal article
dc.volume.number104
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