Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
| dc.contributor.author | García, Héctor | |
| dc.contributor.author | Castán, Helena | |
| dc.contributor.author | Dueñas, Salvador | |
| dc.contributor.author | Bailón, Luis | |
| dc.contributor.author | García Hernansanz, Rodrigo | |
| dc.contributor.author | Olea Ariza, Javier | |
| dc.contributor.author | Prado Millán, Álvaro Del | |
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.date.accessioned | 2023-06-18T06:55:28Z | |
| dc.date.available | 2023-06-18T06:55:28Z | |
| dc.date.issued | 2016-07-16 | |
| dc.description | © 2016 The Author(s). The study has been supported by the Spanish TEC2014 under Grant Nos. 52152-C3-3-R and TEC2013-41730-R, funded by the Ministerio de Economía y Competitividad, and the P2013/MAE-2780 funded by the Comunidad de Madrid. | |
| dc.description.abstract | A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Spanish TEC2014 Ministerio de Economía y Competitividad | |
| dc.description.sponsorship | Comunidad de Madrid, Spain | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/39027 | |
| dc.identifier.doi | 10.1186/s11671-016-1545-z | |
| dc.identifier.issn | 1556-276X | |
| dc.identifier.officialurl | http://dx.doi.org/10.1186/s11671-016-1545-z | |
| dc.identifier.relatedurl | http://nanoscalereslett.springeropen.com/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/24594 | |
| dc.journal.title | Nanoscale research letters | |
| dc.language.iso | eng | |
| dc.publisher | Springer | |
| dc.relation.projectID | 52152-C3-3-R | |
| dc.relation.projectID | TEC2013-41730-R | |
| dc.relation.projectID | P2013/MAE-2780 | |
| dc.rights | Atribución 3.0 España | |
| dc.rights.accessRights | open access | |
| dc.rights.uri | https://creativecommons.org/licenses/by/3.0/es/ | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Interface | |
| dc.subject.keyword | Deffects | |
| dc.subject.keyword | Voltage | |
| dc.subject.keyword | Layer. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications | |
| dc.type | journal article | |
| dc.volume.number | 11 | |
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