Fotodetectores de infrarrojo basados en semiconductores hiperdopados compatibles con la tecnología CMOS
Loading...
Download
Official URL
Full text at PDC
Publication date
2024
Defense date
17/11/2023
Authors
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
Universidad Complutense de Madrid
Citation
Abstract
Los semiconductores hiperdopados han experimentado un desarrollo significativo en poco más de una década y se están utilizando para ampliar hacia otros rangos espectrales las propiedades optoelectrónicas de los semiconductores tradicionales, como el silicio (Si) y el germanio (Ge). Estos materiales semiconductores del grupo IV, especialmente el silicio, desempeñan un papel dominante en el ámbito de la microelectrónica. Esto se debe a una serie de razones, siendo una de las más destacadas su abundancia, ya que el silicio es el material sólido más abundante en la corteza terrestre. Además, presenta una capa de óxido térmicamente estable con propiedades aislantes y pasivantes esenciales para la fabricación microelectrónica. Estas ventajas, entre otras, hacen que el silicio acapare más del 95 % de la producción en el campo dela microelectrónica, respaldado por tecnología de bajo costo y ampliamente desarrollada para su uso industrial...
Hyperdoped semiconductors have been a subject of intense research for just over a decade, and they are proving instrumental in expanding the optoelectronic capabilities of conventional semiconductors like silicon (Si) and germanium (Ge) into previously unexplored spectral ranges. Group IV semiconductors, and silicon (Si) in particular, have long held a dominant position in the field of microelectronics. This supremacy can be attributed mainly to the remarkable abundance of Si, considering that it stands as the most prevalent solid material in the Earth's crust, among other factors. Moreover, silicon possesses a stable thermal oxide layer endowed with insulating and passivating properties, which are essential for microelectronics industry. These advantages, among others, have rmly established silicon as the foundation for more than 95 % of microelectronics production, backed by a cost-effective technological infrastructure that has been thoroughly rened for the microelectronics industry...
Hyperdoped semiconductors have been a subject of intense research for just over a decade, and they are proving instrumental in expanding the optoelectronic capabilities of conventional semiconductors like silicon (Si) and germanium (Ge) into previously unexplored spectral ranges. Group IV semiconductors, and silicon (Si) in particular, have long held a dominant position in the field of microelectronics. This supremacy can be attributed mainly to the remarkable abundance of Si, considering that it stands as the most prevalent solid material in the Earth's crust, among other factors. Moreover, silicon possesses a stable thermal oxide layer endowed with insulating and passivating properties, which are essential for microelectronics industry. These advantages, among others, have rmly established silicon as the foundation for more than 95 % of microelectronics production, backed by a cost-effective technological infrastructure that has been thoroughly rened for the microelectronics industry...
Description
Tesis inédita de la Universidad Complutense de Madrid, Facultad de Ciencias Físicas, leída el 17-11-2023