Characterization of thin layers of n- and p-type GaN

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dc.contributor.authorCastaldini, A.
dc.contributor.authorCavallini, A.
dc.contributor.authorPolenta, L.
dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-20T19:01:03Z
dc.date.available2023-06-20T19:01:03Z
dc.date.issued2002-04-30
dc.description© 2002 Elsevier Science B.V. All rights reserved. International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX) (9. 2001. Rimini, Italia). The authors wish to thank David C. Look, Hadis Morkoc and Joseph Van Nostrand for providing the samples. C. Díaz-Guerra acknowledges M.E.C.D. for a post-doctoral research grant.
dc.description.abstractTechnological improvement of GaN-based devices for electronic and optoelectronic applications makes essential both monitoring and controlling point and extended defects, which can have detrimental effects in device performance. For gallium nitride, thickness is a key parameter controlling the density and distribution of defects, especially extended ones. In this work highly defective thin GaN layers, both p- and n-type, have been characterized by photocurrent (PC) and time-resolved cathodoluminescence (TRCL) spectroscopy in order to evidence the presence of defect-related bands influencing the electrical and optical activity of the material. Scanning microscopy-based techniques, namely electron beam induced current (EBIC), CL imaging and optical beam induced current (OBIC) have been applied to investigate the recombination activity and the spatial distribution of the extended defects.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMECD
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26283
dc.identifier.doi10.1016/S0921-5107(01)01051-0
dc.identifier.issn0921-5107
dc.identifier.officialurlhttp://dx.doi.org/10.1016/S0921-5107(01)01051-0
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59112
dc.journal.titleMaterials Science and Engineering B-Solid State Materials for Advanced Technology
dc.language.isoeng
dc.page.final312
dc.page.initial308
dc.publisherElsevier Science Sa
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordMolecular-Beam Epitaxy
dc.subject.keywordDoped Gan
dc.subject.keywordPhotoluminescence
dc.subject.keywordFilms
dc.subject.keywordLuminescence
dc.subject.keywordMg
dc.subject.keywordCathodoluminescence
dc.subject.keywordSpectroscopy
dc.subject.keywordEmission
dc.subject.ucmFísica de materiales
dc.titleCharacterization of thin layers of n- and p-type GaN
dc.typejournal article
dc.volume.number91
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