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Silicon oxides as alignment surfaces for vertically-aligned nematics in photonic devices

dc.contributor.authorOtón, Eva
dc.contributor.authorLópez De Andrés, María Sol
dc.contributor.authorBennis, Noureddine
dc.contributor.authorOtón Sánchez, José Manuel
dc.contributor.authorGeday, M. A.
dc.date.accessioned2023-06-19T13:42:11Z
dc.date.available2023-06-19T13:42:11Z
dc.date.issued2014-06
dc.description.abstractA comparative study on alignment performance and microstructure of inorganic layers used for liquid crystal cell conditioning has been carried out. The study has focused on two specific materials, SiOx and SiO2, deposited under different conditions. The purpose was to establish a relationship between layer microstructure and liquid crystal alignment. The surface morphology has been studied by FESEM and AFM. An analysis on liquid crystal alignment, pretilt angle, response time, contrast ratio and the conditions to develop backflow effect (significant rise time increase due to pure homeotropic alignment) on vertically-aligned nematic cells has been carried out. A technique to overcome the presence of backflow has been identified. The full comparative study of SiOx and SiO2 layer properties and their influence over liquid crystal alignment and electrooptic response is presented
dc.description.departmentDepto. de Mineralogía y Petrología
dc.description.facultyFac. de Ciencias Geológicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Ciencia e Innovación (MICINN)
dc.description.sponsorshipComunidad de Madrid
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/63896
dc.identifier.doi10.2478/s11772-014-0182-2
dc.identifier.issn1230-3402
dc.identifier.officialurlhttps://link.springer.com/journal/11772/volumes-and-issues/22-2
dc.identifier.urihttps://hdl.handle.net/20.500.14352/34290
dc.issue.number2
dc.journal.titleOpto-Electronics Review
dc.language.isoeng
dc.page.final100
dc.page.initial92
dc.publisherSpringer
dc.relation.projectIDALCOD (TEC2008− −00147)
dc.relation.projectIDFACTO− TEM (S2009/ESP1781)
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España
dc.rights.accessRightsopen access
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject.cdu548
dc.subject.cdu549
dc.subject.keywordSiOx
dc.subject.keywordSiO2
dc.subject.keywordSilicon oxides
dc.subject.keywordVertically aligned nematics
dc.subject.keywordPhotonic devices
dc.subject.keywordMorphology characterization
dc.subject.ucmCristalografía (Geología)
dc.subject.ucmMineralogía (Geología)
dc.subject.unesco2506.11 Mineralogía
dc.titleSilicon oxides as alignment surfaces for vertically-aligned nematics in photonic devices
dc.typejournal article
dc.volume.number22
dspace.entity.typePublication
relation.isAuthorOfPublicatione8889f99-6c40-4a0d-a11b-d305a8a9ecea
relation.isAuthorOfPublication.latestForDiscoverye8889f99-6c40-4a0d-a11b-d305a8a9ecea

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