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Luminescence properties of transition-metal-doped GaSb

dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorDutta, P: S.
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:55:58Z
dc.date.available2023-06-20T18:55:58Z
dc.date.issued1998-03-15
dc.description© The American Physical Society. This Work Was Supported By The DGICYT (Project No. PB93-1256) And CICYT (Project No. 95-0086-OP).
dc.description.abstractThe luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal direction of the crystals grown by the Bridgman method has been investigated. These dopants suppress the native acceptor concentration to varying extent. The behavior of Ru has been found to be different from the behavior of V and Cr. In particular the complete disappearance of the 777 meV (band A) emission has been observed in GaSb:Ru with a low doping level. A peak at 767 meV is also seen in this sample which, to the best of our knowledge, has not been previously observed in GaSb. The CL results have been complemented by x-ray-microanalysis measurements to ascertain the effect of doping level on the luminescence properties.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipDGICYT
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24715
dc.identifier.doi10.1103/PhysRevB.57.6479
dc.identifier.issn0163-1829
dc.identifier.officialurlhttp://prb.aps.org/abstract/PRB/v57/i11/p6479_1
dc.identifier.relatedurlhttp://prb.aps.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58950
dc.issue.number11
dc.journal.titlePhysical Review B
dc.language.isoeng
dc.page.final6484
dc.page.initial6479
dc.publisherAmerican Physical Society
dc.relation.projectIDPB93-1256
dc.relation.projectID95-0086-OP
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordSb-Rich Solutions
dc.subject.keywordGallium Antimonide
dc.subject.keywordPhotoluminescence
dc.subject.keywordCathodoluminescence
dc.subject.keywordEpitaxy
dc.subject.ucmFísica de materiales
dc.titleLuminescence properties of transition-metal-doped GaSb
dc.typejournal article
dc.volume.number57
dcterms.references1 A. M. Hennel, in Imperfections in III/V Materials, edited byy R. K. Willardson, A. C. Beer, and E. R. Weber, Vol. 38 of Semiconductors and Semimetals (Academic, New York, 1993). 2 E. M. Omel’yanovskii and V. I. Fistul, Transition Metal Impurities in Semiconductors (Adam Hilger, Bristol, 1986). 3 B. Stepanek, P. Hubik, J. J. Mares, J. Kristofik, V. Sestakova, L. Pekarek, and J. Sestak, Semicond. Sci. Technol. 9, 1138 (1994). 4 T. Adhikari and S. Basu, Mater. Sci. Eng. B 27, 47 (1994). 5 P. S. Dutta, H. L. Bhat, and V. Kumar, J. Appl. Phys. 81, 5821 (1997). 6 G. N. Panin, P. S. Dutta, J. Piqueras, and E. Dieguez, Appl. Phys. Lett. 67, 3584 (1995). 7 B. Méndez, J. Piqueras, P. S. Dutta, and E. Dieguez, Appl. Phys. Lett. 67, 2648 (1995). 8 B. Méndez and J. Piqueras, J. Appl. Phys. 69, 2776 (1991). 9 M. Lee, D. J. Nicholas, K. E. Singer, and B. Hamilton, J. Appl. Phys. 59, 2895 (1986). 10 C. Anayama, T. Tanahashi, H. Kuwatsuka, S. Nishiyama, S. Isozumi, and K. Nakajima, Appl. Phys. Lett. 56, 239 (1990). 11 B. Méndez, J. Piqueras, P. S. Dutta, and E. Dieguez, Mater. Sci. Eng. B 42, 38 (1996). 12 E. I. Georgitsé, L. M. Gutsulyak, V. I. Ivanov-Omskil, V. A. Smirnov, and Sh. U. Yuldashev, Sov. Phys. Semicond. 25, 1180 (1991). 13 B. G. Yacobi and D. B. Holt, Cathodoluminescence Microscopy of Inorganic Solids (Plenum, New York, 1990). 14 M. C. Wu and C. C. Chen, J. Appl. Phys. 72, 4275 (1992)
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