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Rabi oscillations in semiconductor superlattices

dc.contributor.authorDíez Alcántara, Eduardo
dc.contributor.authorGómez-Alcalá, R.
dc.contributor.authorDomínguez-Adame Acosta, Francisco
dc.contributor.authorSanchez, A.
dc.contributor.authorBerman, G. P.
dc.date.accessioned2023-06-20T19:11:15Z
dc.date.available2023-06-20T19:11:15Z
dc.date.issued1998-07-15
dc.description© 1998 The American Physical Society. E.D. thanks Antti-Pekka Jauho for illuminating conversations and his warm hospitality at Mikroelektronik Centret where this paper was written in part. Work at Leganés and Madrid was supported by CICYT (Spain) under Projects Nos. MAT95-0325 and PB96-0199. E.D. gratefully acknowledges partial support from Fundación Universidad Carlos III de Madrid. G.P.B. gratefully acknowledges partial support by the Defense Advanced Research Projects Agency.
dc.description.abstractWe investigate the dynamics of a semiconductor superlattice driven by an ac electric field by solving numerically the one-dimensional time-dependent Schrodinger equation including interface roughness effects. Rabi oscillations between minibands are clearly identified under resonant conditions, but we show that their lifetime is controlled by a characteristic time that depends on the superlattice deviation from perfection and is independent of the electric field. Experiments for the observation of the predicted effects are proposed. [[S0163-1829(98)01327-7].
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCICYT
dc.description.sponsorshipFundación Universidad Carlos III de Madrid
dc.description.sponsorshipDefense Advanced Research Projects Agency
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27628
dc.identifier.doi10.1103/PhysRevB.58.1146
dc.identifier.issn0163-1829
dc.identifier.officialurlhttp://dx.doi.org/10.1103/PhysRevB.58.1146
dc.identifier.relatedurlhttp://journals.aps.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59365
dc.issue.number3
dc.journal.titlePhysical Review B
dc.language.isoeng
dc.page.final1149
dc.page.initial1146
dc.publisherAmerican Physical Society
dc.relation.projectIDMAT95-0325
dc.relation.projectIDPB96-0199
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordPhysics
dc.subject.keywordCondensed Matter
dc.subject.ucmFísica de materiales
dc.titleRabi oscillations in semiconductor superlattices
dc.typejournal article
dc.volume.number58
dcterms.references1. J. B. Pieper and J. C. Price, Phys. Rev. Lett. 72, 3586 (1994). 2. S. T. Cundiff, A. Knorr, J. Feldmann, S. W. Koch, E. O. Göbel, and H. Nickel, Phys. Rev. Lett. 73, 1178 (1994). 3. T. Martin and G. P. Berman, Phys. Lett. A 196, 65 (1994). 4. D. W. Hone and X.-G. Zhao, Phys. Rev. B 53, 4834 (1996). 5. C. A. Stafford and N. S. Wingreen, Phys. Rev. Lett. 76, 1916 (1996). 6. A.-P. Jauho and K. Johnsen, Phys. Rev. Lett. 76, 4576 (1996). 7. X.-G. Zhao, G. A. Georgakis, and Q. Niu, Phys. Rev. B 54, R5235 (1996). 8. A. Wacker, A. P. Jauho, S. Zeuner, and S. J. Allen, Phys. Rev. B 56, 13 268 (1998). 9. E. Diez, A. Sánchez, F. Domıínguez-Adame, and G. P. Berman, Phys. Rev. B 54, 14 550 (1996). 10. J. P. Reynolds and M. Luban, Phys. Rev. B 54, R14 301 (1996). 11. E. Diez, F. Domínguez-Adame, and A. Sánchez, Microelectron. Eng. 43, 103 (1998). 12. C. Cohen-Tannoudji, B. Diu, and F. Laloë, Quantum Mechanics (Wiley, New York, 1977). 13. K. A. Mäder, L.-W. Wang, and A. Zunger, J. Appl. Phys. 78, 6639 (1995). 14. Details of the calculation will be given elsewhere. 15H. Drexler, J. S. Scott, S. J. Allen, K. L. Campman, and A. C. Gossard, Appl. Phys. Lett. 67, 2816 (1995).
dspace.entity.typePublication
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relation.isAuthorOfPublicationdbc02e39-958d-4885-acfb-131220e221ba
relation.isAuthorOfPublication.latestForDiscoverydbc02e39-958d-4885-acfb-131220e221ba

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