Pulsed Laser Melting Effects on Single Crystal Gallium Phosphide
| dc.book.title | Proceedings of the 2009 Spanish Conference on Electron Devices | |
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Olea Ariza, Javier | |
| dc.date.accessioned | 2023-06-20T13:41:00Z | |
| dc.date.available | 2023-06-20T13:41:00Z | |
| dc.date.issued | 2009 | |
| dc.description | Spanish Conference on Electron Devices (7.2009.Santiago de Compostela). © 2009 IEEE. Authors would like to acknowledge the CAI of X-ray diffraction of the Complutense University of Madrid for GIXRD measurements and the CAI of Técnicas Físicas of the Complutense University of Madrid for ohmic contact evaporation for electric measurements. This work was made possible thanks to the FPI program (Grant No. BES-2005-7063) and to the contract MAT2007-63617 of the Spanish Ministry of Education and Science. This work was partially supported by the Project NUMANCIA (Grant No. S-0505/ENE/000310) funded by the Comunidad de Madrid and by the Project GENESIS-FV (Grant No. CSD2006-00004) funded by the Spanish Consolider National Program. | |
| dc.description.abstract | We have investigated the pulse laser melting (PLM) effects on single crystal Gal?. The samples have been studied by means of Raman spectroscopy, glancing incidence X-ray diffraction (GIRXD), van der Pauw and Hall effect measurements. After PLM process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of Gal?. This suggests the formation of crystalline domains with a different orientation in the Gal? PLM region regarding to the GaP unannealed region. This behavior has been corroborated by glancing incidence x-ray diffraction measurements. A slightly increase in the sheet resistivity and a suppression of the mobility in PLM samples have been observed in all the measured temperature range. Such annealing effects are a cause of great concern for intermediate band (IB) materials formation where PLM processes are required first, to recovery the lattice crystallinity after high dose ion implantation processes and second, to avoid impurities outdiffusion when the solid solubility limit is exceeded. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | FPI program of the Spanish Ministry of Education and Science | |
| dc.description.sponsorship | Comunidad de Madrid | |
| dc.description.sponsorship | Spanish Consolider National Program | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25943 | |
| dc.identifier.doi | 10.1109/SCED.2009.4800425 | |
| dc.identifier.isbn | 978-1-4244-2838-0 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1109/SCED.2009.4800425 | |
| dc.identifier.relatedurl | http://ieeexplore.ieee.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/53367 | |
| dc.language.iso | eng | |
| dc.page.final | 45 | |
| dc.page.initial | 42 | |
| dc.page.total | 4 | |
| dc.publisher | IEEE | |
| dc.relation.projectID | BES-2005-7063 | |
| dc.relation.projectID | MAT2007-63617 | |
| dc.relation.projectID | Project NUMANCIA-S-0505/ENE/000310 | |
| dc.relation.projectID | Project GENESIS-FV-CSD2006-00004 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Efficiency | |
| dc.subject.keyword | Alloys | |
| dc.subject.keyword | GaAs | |
| dc.subject.keyword | INP. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Pulsed Laser Melting Effects on Single Crystal Gallium Phosphide | |
| dc.type | book part | |
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