Effect of α-Hgl_2 epitaxial growth on the defect structure of CdTe:Ge substrates
| dc.contributor.author | Panin, G. N. | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Sochinskii, N. | |
| dc.contributor.author | Dieguez, E. | |
| dc.date.accessioned | 2023-06-20T19:02:47Z | |
| dc.date.available | 2023-06-20T19:02:47Z | |
| dc.date.issued | 1997-02-17 | |
| dc.description | © 1997 American Institute of Physics. G. P. and N. S. thank Spanish MEC for research grants. This work was supported by the DGICYT (Project No. PB 93-1256) and CICYT (Project No. ESP95-0148). | |
| dc.description.abstract | The aα-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mu m from the α-Hgl_2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V-Te generation at the interface take place during α-Hgl_2 epitaxial growth. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | MEC | |
| dc.description.sponsorship | DGICYT | |
| dc.description.sponsorship | CICYT | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26432 | |
| dc.identifier.doi | 10.1063/1.118237 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.118237 | |
| dc.identifier.relatedurl | http://scitation.aip.org/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59161 | |
| dc.issue.number | 7 | |
| dc.journal.title | Applied Physics Letters | |
| dc.language.iso | eng | |
| dc.page.final | 879 | |
| dc.page.initial | 877 | |
| dc.publisher | Amer Inst Physics | |
| dc.relation.projectID | PB 93-1256 | |
| dc.relation.projectID | ESP95-0148 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Cathodoluminescence | |
| dc.subject.keyword | Crystals | |
| dc.subject.keyword | Wafers | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Effect of α-Hgl_2 epitaxial growth on the defect structure of CdTe:Ge substrates | |
| dc.type | journal article | |
| dc.volume.number | 70 | |
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| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c |
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