Effect of erbium on the luminescence properties of GaSb crystals

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dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorPlaza, J. L.
dc.contributor.authorDiéguez, E.
dc.date.accessioned2023-06-20T18:56:12Z
dc.date.available2023-06-20T18:56:12Z
dc.date.issued1998
dc.description.abstractThe interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independent rare-earth luminescence and the possibility of activation of the emitting rare-earth centers by minority carrier injection. In this work the effect of erbium doping on the luminescence and on the native accepters of GaSb crystals has been investigated by CL-SEM. Er doping has been found to increase the total CL intensity and to produce spectral changes that depend on the erbium concentration. At moderate doping the native acceptor concentration, as detected by the luminescence band A, decreases. At high Er concentrations Er-Sb precipitates form and doping appears not to be efficient in the suppression of accepters. X-ray microanalysis reveals that the composition of the precipitates is Er-5 Sb-3. Emission from intraionic transitions of Er is observed in highly doped crystals.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24779
dc.identifier.issn1012-0394
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58958
dc.journal.titleSolid State Phenomena
dc.page.final220
dc.page.initial215
dc.publisherTrans tech-Scitec Publications LTD
dc.rights.accessRightsmetadata only access
dc.subject.cdu538.9
dc.subject.keywordLiquid-Phase Epitaxy
dc.subject.keywordLongitudinal Mode-Operation
dc.subject.keywordSb-Rich Solutions
dc.subject.keywordDoped Inp
dc.subject.keywordPhotoluminescence
dc.subject.keywordGaas
dc.subject.keywordSpectroscopy
dc.subject.keywordExcitation
dc.subject.keywordLasers
dc.subject.ucmFísica de materiales
dc.titleEffect of erbium on the luminescence properties of GaSb crystals
dc.typejournal article
dc.volume.number63-64
dspace.entity.typePublication
relation.isAuthorOfPublicationc834e5a4-3450-4ff7-8ca1-663a43f050bb
relation.isAuthorOfPublication465cfd5b-6dd4-4a48-a6e3-160df06f7046
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb
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