Cathodoluminescence enhancement in porous silicon cracked in vacuum
| dc.contributor.author | Rams, J. | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Craciun, G. | |
| dc.contributor.author | Plugaru, R. | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T18:55:46Z | |
| dc.date.available | 2023-06-20T18:55:46Z | |
| dc.date.issued | 1999-03-22 | |
| dc.description | © 1999 American Institute of Physics. This work was supported by the DGES (Project No.PB96-0639) and by the Scientific Cooperation Programme between Spain and Romania. | |
| dc.description.abstract | An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGES | |
| dc.description.sponsorship | Scientific Cooperation Programme between Spain and Romania | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24677 | |
| dc.identifier.doi | 10.1063/1.123669 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.officialurl | http://apl.aip.org/resource/1/applab/v74/i12/p1728_s1 | |
| dc.identifier.relatedurl | http://apl.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58944 | |
| dc.issue.number | 12 | |
| dc.journal.title | Applied physics Letters | |
| dc.language.iso | eng | |
| dc.page.final | 1730 | |
| dc.page.initial | 1728 | |
| dc.publisher | Amer Inst Physics | |
| dc.relation.projectID | PB96-0639 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Electron-Beam Irradiation | |
| dc.subject.keyword | Luminescence Properties | |
| dc.subject.keyword | Photoluminescence | |
| dc.subject.keyword | Microscopy | |
| dc.subject.keyword | States | |
| dc.subject.keyword | Si | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Cathodoluminescence enhancement in porous silicon cracked in vacuum | |
| dc.type | journal article | |
| dc.volume.number | 74 | |
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| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 |
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