The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

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dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorArtús, L.
dc.contributor.authorCalleja, E.
dc.contributor.authorCuscó, R.
dc.contributor.authorIborra, E.
dc.contributor.authorJiménez, J.
dc.contributor.authorPastor, D.
dc.contributor.authorPeiró, F.
dc.date.accessioned2023-06-20T10:48:16Z
dc.date.available2023-06-20T10:48:16Z
dc.date.issued2006-08-15
dc.description© American Institute of Physics. This work has been supported by the Spanish Ministry of Science and Technology under Contract Nos. MAT2004-0664 and MAT2004-02875. The authors wish to thank Dr. M. Marsal for her expert assistance with the EDX measurements.
dc.description.abstractWe have studied the effects of rapid thermal annealing at 1300 degrees C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si3N4 crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3 nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish Ministry of Science and Technology
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27430
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dc.identifier.doi10.1063/1.2259817
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.2259817
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51253
dc.issue.number4
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDMAT2004-0664
dc.relation.projectIDMAT2004-02875
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordMolecular-Beam Epitaxy
dc.subject.keywordLight-Emitting-Diodes
dc.subject.keywordRaman-Scattering
dc.subject.keywordSilicon-Nitride
dc.subject.keywordGallium Nitride
dc.subject.keywordImplanted GaN
dc.subject.keywordSi (111)
dc.subject.keywordNanocrystals
dc.subject.keywordModes.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleThe effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
dc.typejournal article
dc.volume.number100
dspace.entity.typePublication
relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203
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