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Nanostructured Top Contact as an Alternative to Transparent Conductive Oxides in Tandem Perovskite/c-Si Solar Cells

dc.contributor.authorHamdy Mohamed Elshorbagy, Mahmoud
dc.contributor.authorEsteban Martínez, Óscar
dc.contributor.authorCuadrado Conde, Alexander
dc.contributor.authorAlda, Javier
dc.date.accessioned2023-06-22T10:53:39Z
dc.date.available2023-06-22T10:53:39Z
dc.date.issued2022-02-11
dc.descriptionReceived: 25 January 2022 / Revised: 7 February 2022 / Accepted: 9 February 2022 / Published: 11 February 2022
dc.description.abstractIn the competition of solar cell efficiency, besides top-performance multijunction cells, tandem cells based on perovskites are also breaking efficiency records to enter into the 30% range. Their design takes advantage of the rapid development of perovskite cells, and the good sharing of the available spectrum between the perovskite, absorbing at short wavelengths, and the c-Si or similar lower band gap material, working at longer wavelengths. In this paper, we present a novel tandem solar cell that combines crystalline silicon (c-Si) and perovskites cells. We analyzed the device with computational electromagnetism based on the finite element method. Our design arranges the perovskite solar cell as a multilayer 1D grating, which is terminated with a gold thin film (top metallic contact). This multilayer nanostructure is placed on top of the c-Si cell and a thin protective dielectric layer of aluminum nitride covers the whole device. The short-circuit current of the perovskite cell is maximized by maintaining the current-matching conditions with the output from the c-Si cell. This optimization considers the geometrical parameters of the grating: period and thickness of the active layer of the perovskite cell. We compared the simulated short-circuit current of this device to the planar tandem solar cell with indium tin oxide (top contact). The comparison shows a slight increment, around 3%, of our device’s performance. Moreover, it has the potential capability to circumvent postprocessing procedures used with transparent contact oxides, which can reduce the device’s final efficiency. Furthermore, our proposed design can take advantage of photolithographic and nanoimprint techniques, enabling large-scale production at a relatively low cost.
dc.description.departmentSección Deptal. de Óptica (Óptica)
dc.description.facultyFac. de Óptica y Optometría
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Ciencia e Innovación (MICINN)/FEDER
dc.description.sponsorshipComunidad de Madrid/ FEDER
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/74024
dc.identifier.doi10.3390/app12041854
dc.identifier.issn2076-3417
dc.identifier.officialurlhttps://doi.org/10.3390/app12041854
dc.identifier.relatedurlhttps://www.mdpi.com/2076-3417/12/4/1854#
dc.identifier.urihttps://hdl.handle.net/20.500.14352/71849
dc.issue.number4
dc.journal.titleApplied Sciences
dc.language.isoeng
dc.page.initial9 p.
dc.publisherMDPI
dc.relation.projectIDNERA (RTI2018-101037-B-I00); NANOROOMS (PID2019-105918GB-I00); TELURO (RTC2019-007113-3)
dc.relation.projectIDSINFOTON2CM (S2018/NMT-4326)
dc.rightsAtribución 3.0 España
dc.rights.accessRightsopen access
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/es/
dc.subject.cdu539.2:620.1
dc.subject.cdu537.8
dc.subject.cdu620.92
dc.subject.keywordtandem perovskite/c-Si solar cell
dc.subject.keywordnanostructured metallic top contact
dc.subject.keywordoptical modeling
dc.subject.keywordcomputational electromagnetism
dc.subject.ucmElectromagnetismo
dc.subject.ucmÓptica (Física)
dc.subject.ucmPartículas
dc.subject.unesco2202 Electromagnetismo
dc.subject.unesco2209.19 Óptica Física
dc.subject.unesco2208 Nucleónica
dc.titleNanostructured Top Contact as an Alternative to Transparent Conductive Oxides in Tandem Perovskite/c-Si Solar Cells
dc.typejournal article
dc.volume.number12
dspace.entity.typePublication
relation.isAuthorOfPublication9e826a47-d7f1-49c7-a63b-ede2d09f71d9
relation.isAuthorOfPublicationce5e5998-478d-43b4-a65f-9e77bab602de
relation.isAuthorOfPublication.latestForDiscoveryce5e5998-478d-43b4-a65f-9e77bab602de

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