Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide
| dc.book.title | CAS '96 Proceedings - 1996 International Semiconductor Conference | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Panin, G. N. | |
| dc.contributor.author | Dutta, P. S. | |
| dc.contributor.author | Dieguez, E. | |
| dc.date.accessioned | 2023-06-20T21:08:58Z | |
| dc.date.available | 2023-06-20T21:08:58Z | |
| dc.date.issued | 1996 | |
| dc.description | © 1996 IEEE. 1996 International Semiconductor Conference (CAS 96) (1996.Sinaia, Romania) | |
| dc.description.abstract | Cathodoluminescence in the scanning electron microscope is used to ivestigate growth and prosess induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different annealing and irradiation treatments. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24835 | |
| dc.identifier.isbn | 0-7803-3223-7 | |
| dc.identifier.officialurl | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=557426 | |
| dc.identifier.relatedurl | http://ieeexplore.ieee.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/60822 | |
| dc.language.iso | eng | |
| dc.page.final | 506 | |
| dc.page.initial | 497 | |
| dc.page.total | 10 | |
| dc.publisher | I E E E | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Engineering | |
| dc.subject.keyword | Electrical & Electronic | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide | |
| dc.type | book part | |
| dc.volume.number | 1 y 2 | |
| dcterms.references | 1) A.G. Milnes and A.Y. Polyakov, Solid State Electronics 34, 803 (1993) 2) B. Méndez, P.S. Dutta, J. Piqueras and E. Dieguez, Appl. Phys. Lett. 67,2648 (1995) 3) G.N. Panin, P.S. Dutta, 9. Piqueras and E. Dieguez, Appl. Phys. Lett. 67,3584 (1995) 4) P.S. Dutta, A.K. Sreedhar? I3.L. Bhat, G.C. Duber, V. Kumar, E. Dieguez, U. Pal and 3. Piqueras, Accepted in Journal of Applied Physics 5 ) K. Nakashima, Jpn. J. Appl. Phys. 24,1085 (1981) 6) A. I. Lebedev and LA. Stsel'nikova, Sov. Phys. Semicond. 13,229 (1979) 7) R.Callec, P.N. Favennec, M.Salvi, H.L. Haridon, and M.Gauneau, Appl.Phys.Lett.S,1872 (1 99 1) 8) S.9. Pearton, A.R. Von Neida, 9. M. Brown, K.T. Short, L. J. Oster, and U.K. Chakrabarti, J. Appl. Phys. @, 629 (1988) 9) M. Perotin, L. Gouskov, M.L uquet, P. Abiale Abi, A. Sabir, and A. Perez, J. Appl. Phys. a,37 56 (1990) 10) Y. K. Su, K.J. Gan, J.S. Hwang, and S.L. Tyan, J. Appl. Phys. 48,5584 (1990) 1 1 ) P.S. Dutta, K.S. Sangunni, H.L. Bhat and V. Kumar, J. Cryst. Growth. W,44 (1994) 12) B. MBndez and J. Piqueras, 3. Appl. Phys. 69,2776 (1991) 13) W. Jakowetz, W. Ruhle, K.Breuninger, and M. Pilkuhn, Phys. Stat. Sol.(a) 12, 169 (1972) 14) M. Lee, D.J. Nicholas, K.E.Singer, and B. Hamilton, J. Appl. Phys. 3,2895 (3986) 15) M.C. Wu, and G.C.C hen, J.Appl. Phys. 72,4275 (1992) 16) D.. Weiler and H. Mehrer, Philos. Mag. A 422,309 (1984) 17) J. Doerschel and U. Geissler, J. Crystal Growth. 121,781 (1992) | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication.latestForDiscovery | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 |
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