Electron transport across a Gaussian superlattice
dc.contributor.author | Gomez, I. | |
dc.contributor.author | Domínguez-Adame Acosta, Francisco | |
dc.contributor.author | Díez Alcántara, Eduardo | |
dc.contributor.author | Bellani, V. | |
dc.date.accessioned | 2023-06-20T19:11:05Z | |
dc.date.available | 2023-06-20T19:11:05Z | |
dc.date.issued | 1999-04-01 | |
dc.description | © 1999 American Institute of Physics. Work at Madrid has been supported by CAM (Spain) under Project No. 07N/0034/1998. | |
dc.description.abstract | We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j-V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices. | |
dc.description.department | Depto. de Física de Materiales | |
dc.description.faculty | Fac. de Ciencias Físicas | |
dc.description.refereed | TRUE | |
dc.description.sponsorship | CAM | |
dc.description.status | pub | |
dc.eprint.id | https://eprints.ucm.es/id/eprint/27588 | |
dc.identifier.doi | 10.1063/1.369764 | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.officialurl | http://dx.doi.org/10.1063/1.369764 | |
dc.identifier.relatedurl | http://scitation.aip.org/ | |
dc.identifier.uri | https://hdl.handle.net/20.500.14352/59361 | |
dc.issue.number | 7 | |
dc.journal.title | Journal of Applied Physics | |
dc.language.iso | eng | |
dc.page.final | 3918 | |
dc.page.initial | 3916 | |
dc.publisher | American Institute of Physics | |
dc.relation.projectID | No. 07N/0034/1998 | |
dc.rights.accessRights | open access | |
dc.subject.cdu | 538.9 | |
dc.subject.keyword | Physics | |
dc.subject.keyword | Applied | |
dc.subject.ucm | Física de materiales | |
dc.title | Electron transport across a Gaussian superlattice | |
dc.type | journal article | |
dc.volume.number | 85 | |
dcterms.references | 1. L. Esaki and R. Tsu, IBM J. Res. Dev. 14, 61 (1970). 2. R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973). 3. H.-H. Tung and C.-P. Lee, IEEE J. Quantum Electron. 32, 507 (1996). 4. K. A. Mäder and A. Zunger, Europhys. Lett. 31, 107 (1995). 5. J. H. Luscombe, Nanotechnology 4, 1 (1993). 6. F. Domínguez-Adame, A. Sánchez, and E. Diez, Phys. Rev. 50, 17736 (1994). 7. C. B. Duke, Tunneling in Solids (Academic, New York, 1969). 8. T. B. Boykin, Phys. Rev. B 51, 4289 (1995). 9. F. Domínguez-Adame, B. Méndez, and E. Maciá, Semicond. Sci. Technol. 9, 263 (1994). 10. C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, and G. Gornik, Phys. Rev. Lett. 81, 3495 (1998). | |
dspace.entity.type | Publication | |
relation.isAuthorOfPublication | dbc02e39-958d-4885-acfb-131220e221ba | |
relation.isAuthorOfPublication | bc6a5675-68c7-4ee0-b20c-8560937c1c25 | |
relation.isAuthorOfPublication.latestForDiscovery | dbc02e39-958d-4885-acfb-131220e221ba |
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