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Electron transport across a Gaussian superlattice

dc.contributor.authorGomez, I.
dc.contributor.authorDomínguez-Adame Acosta, Francisco
dc.contributor.authorDíez Alcántara, Eduardo
dc.contributor.authorBellani, V.
dc.date.accessioned2023-06-20T19:11:05Z
dc.date.available2023-06-20T19:11:05Z
dc.date.issued1999-04-01
dc.description© 1999 American Institute of Physics. Work at Madrid has been supported by CAM (Spain) under Project No. 07N/0034/1998.
dc.description.abstractWe study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j-V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCAM
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27588
dc.identifier.doi10.1063/1.369764
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.369764
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59361
dc.issue.number7
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final3918
dc.page.initial3916
dc.publisherAmerican Institute of Physics
dc.relation.projectIDNo. 07N/0034/1998
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordPhysics
dc.subject.keywordApplied
dc.subject.ucmFísica de materiales
dc.titleElectron transport across a Gaussian superlattice
dc.typejournal article
dc.volume.number85
dcterms.references1. L. Esaki and R. Tsu, IBM J. Res. Dev. 14, 61 (1970). 2. R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973). 3. H.-H. Tung and C.-P. Lee, IEEE J. Quantum Electron. 32, 507 (1996). 4. K. A. Mäder and A. Zunger, Europhys. Lett. 31, 107 (1995). 5. J. H. Luscombe, Nanotechnology 4, 1 (1993). 6. F. Domínguez-Adame, A. Sánchez, and E. Diez, Phys. Rev. 50, 17736 (1994). 7. C. B. Duke, Tunneling in Solids (Academic, New York, 1969). 8. T. B. Boykin, Phys. Rev. B 51, 4289 (1995). 9. F. Domínguez-Adame, B. Méndez, and E. Maciá, Semicond. Sci. Technol. 9, 263 (1994). 10. C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, and G. Gornik, Phys. Rev. Lett. 81, 3495 (1998).
dspace.entity.typePublication
relation.isAuthorOfPublicationdbc02e39-958d-4885-acfb-131220e221ba
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relation.isAuthorOfPublication.latestForDiscoverydbc02e39-958d-4885-acfb-131220e221ba

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