Effect of In doping in GaSb crystals studied by cathodoluminescence
| dc.contributor.author | Hidalgo Alcalde, Pedro | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Dutta, P: S. | |
| dc.contributor.author | Dieguez, E. | |
| dc.date.accessioned | 2023-06-20T18:55:39Z | |
| dc.date.available | 2023-06-20T18:55:39Z | |
| dc.date.issued | 1999-10 | |
| dc.description | © 1999 IOP Publishing Ltd. This work has been supported by the DGES (project No PB96-0639) and CICYT (projects ESP95-0148 and ESP98-1340). | |
| dc.description.abstract | The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concentration in contrast to what occurs with other isoelectronic dopants (e.g. aluminium). Large In concentrations lead to the formation of the ternary compound In_xGa_(1-x)Sb as revealed by CL spectra and x-ray measurements. In particular, a luminescence band and x-ray diffraction peaks observed in highly doped samples are attributed to the presence of In_xGa_(1-x)Sb. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGES | |
| dc.description.sponsorship | CICYT | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24673 | |
| dc.identifier.doi | 10.1088/0268-1242/14/10/304 | |
| dc.identifier.issn | 0268-1242 | |
| dc.identifier.officialurl | http://iopscience.iop.org/0268-1242/14/10/304 | |
| dc.identifier.relatedurl | http://iopscience.iop.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58940 | |
| dc.issue.number | 10 | |
| dc.journal.title | Semiconductor Science and Technology | |
| dc.language.iso | eng | |
| dc.page.final | 904 | |
| dc.page.initial | 901 | |
| dc.publisher | IOP Publishing LTD | |
| dc.relation.projectID | PB96-0639 | |
| dc.relation.projectID | ESP95-0148 | |
| dc.relation.projectID | ESP98-1340 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Gallium Antimonide | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Effect of In doping in GaSb crystals studied by cathodoluminescence | |
| dc.type | journal article | |
| dc.volume.number | 14 | |
| dcterms.references | [1] Dutta P S, Bhat H L and Kumar V 1997 J. Appl. Phys. 81 5821 [2] Lee M, Nicholas D J, Singer K E and Hamilton B 1986 J. Appl. Phys. 59 2895 P Hidalgo et al [3] Hidalgo P, M´endez B, Piqueras J, Dutta P S and Dieguez E 1998 Solid State Commun. 108 997 [4] Méndez B and Piqueras J 1991 J. Appl. Phys. 69 2776 [5] M´endez B, Piqueras J, Dutta P S and Dieguez E 1995 Appl. Phys. Lett. 67 2648 [6] Hidalgo P, Méndez B, Dutta P S, Piqueras J and Dieguez E 1998 Phys. Rev. B 57 6479 [7] Camassel J and Auvergne D 1975 Phys. Rev. B 12 325 [8] Dutta P S and Ostrogorsky A G 1998 J. Cryst. Growth 194 1 [9] Mathiot D and Edelin G 1980 Phil. Mag. A 41 447 | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | c834e5a4-3450-4ff7-8ca1-663a43f050bb | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | c834e5a4-3450-4ff7-8ca1-663a43f050bb |
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