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Use of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps

dc.contributor.authorLeón Yebra, Carlos
dc.contributor.authorMartín, J. M.
dc.contributor.authorSantamaría Sánchez-Barriga, Jacobo
dc.contributor.authorSkarp, J.
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorSánchez Quesada, Francisco
dc.date.accessioned2023-06-20T20:08:34Z
dc.date.available2023-06-20T20:08:34Z
dc.date.issued1996-05-15
dc.description© 1996 American Institute of Physics.
dc.description.abstractThe use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformations numerically and the validity of the method developed has been tested using simulated data. Two experimental systems, p-n junctions into InP made by ion implantation, and atomic-layer-epitaxy-grown CdS/CdTe heterojunctions, have been characterized using this procedure.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/31278
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://web.ebscohost.com/ehost/detail?sid=b9f68371-0c3a-48c0-9888-622394b0dea2%40sessionmgr114&vid=1&hid=118&bdata=Jmxhbmc9ZXMmc2l0ZT1laG9zdC1saXZl#db=aph&AN=7663090
dc.identifier.relatedurlhttp://web.b.ebscohost.com/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59661
dc.issue.number10
dc.journal.titleJournal of applied physics
dc.language.isoeng
dc.page.final7836
dc.page.initial7830
dc.publisherAmerican Institute of Physics
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordHigh-resistivity
dc.subject.keywordInP.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleUse of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps
dc.typejournal article
dc.volume.number79
dcterms.references1) D. L. Losee, J. Appl. Phys., 46, 2204 (1975). 2) J. L. Pautrat, B. Katircioglu, N. Magnea, J. C. Pfister, L. Revoil, Solid-State Electron., 23, 1159 (1980). 3) C. Ghezzi, Appl. Phys. A, 23, 191 (1981). 4) Impedance Spectroscopy—Emphasizing Solid Materials and Systems, edited by J. R. Macdonald (Wiley-Interscience, New York, 1987). 5) B. A. Boukamp, J. R. Macdonald, Solid State Ionics, 74, 85 (1994). 6) J. R. Macdonald, J. Chem. Phys., 102, 6241 (1995). 7) B. A. Boukamp, Solid State Ionics, 62, 131 (1993). 8) M. Urquidi-Macdonald, S. Real, D. D. Macdonald, Electrochim. Acta, 35, 1559 (1990). 9) J. R. Macdonald, Electrochim. Acta, 38, 1883 (1993). 10) A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectric, London, 1983). 11) R. Wooldridge, An Introduction to Computing (Oxford University Press, London, 1962). 12) B. A. Boukamp, J. Electrochem. Soc., 142, 1885 (1995). 13) J. M. Martín, S. García, F. Calle, I. Mártil, G. González-Díaz, J. Electron. Mater., 24, 59 (1995). 14) M. W. Focht, A. T. Macrander, B. Schwartz, L. C. Feldman, J. Appl. Phys., 55, 3859 (1984). 15) J. Skarp, Y. Koskinen, S. Lindfors, A. Rautiainen, T. Suntola, in Proceedings of the 10th European Photovoltaic Solar Energy Conference Lisbon, Portugal, April 8–12, 1991, p. 567. 16) J. Skarp, E. Anttila, A. Rautiainen, T. Suntola, Int. J. Sol. Energy, 12, 137 (1992). 17) S. J. Pearton, C. R. Abernathy, M. B. Panish, R. A. Hamm, L. M. Lunardi, J. Appl. Phys., 66, 656 (1989).
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