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Complex defect structure in the core of Sn-Doped In2O3 nanorods and its relationship with a dislocation-driven growth mechanism

dc.contributor.authorMaestre Varea, David
dc.contributor.authorHaeussler, D.
dc.contributor.authorCremades Rodríguez, Ana Isabel
dc.contributor.authorJaeger, W.
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-20T03:35:39Z
dc.date.available2023-06-20T03:35:39Z
dc.date.issued2011-09-22
dc.description© 2011 American Chemical Society. This work was supported by MICINN (MAT2009-07882, CSD2009-00013) and UCM-BSCH (Group 910146).
dc.description.abstractSn-doped In2O3 arrow-shaped nanorods have been grown by a catalyst-free evaporation deposition method. Transmission electron microscopy (TEM) investigations reveal a complex defect structure consisting of nanoprecipitates, dislocation loops, and voids, in the core of the nanorods, extending all along the growth axis. The nanoprecipitates are Sn or Sn-rich and appear sometimes associated with small voids. The voids appear aligned in rows or discontinuous empty nanochannels along the nanorod core. TEM images depict the presence of surface ripples perpendicular to the growth direction, with typical distances of less than 10 nm. The relationship of the observed defect structure with a dislocation-driven growth of the nanorods is discussed.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMICINN
dc.description.sponsorshipUCM-BSCH
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/23008
dc.identifier.doi10.1021/jp204579u
dc.identifier.issn1932-7447
dc.identifier.officialurlhttp://pubs.acs.org/doi/abs/10.1021/jp204579u
dc.identifier.relatedurlhttp://pubs.acs.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/43988
dc.issue.number37
dc.journal.titleJournal of physical chemistry C
dc.language.isoeng
dc.page.final18087
dc.page.initial18083
dc.publisherAmer Chemical Soc
dc.relation.projectIDMAT2009-07882
dc.relation.projectIDCSD2009-00013
dc.relation.projectIDGroup 910146
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordOxide Nanowires
dc.subject.keywordIndium Oxide
dc.subject.keywordNanostructures
dc.subject.keywordTwist
dc.subject.ucmFísica de materiales
dc.titleComplex defect structure in the core of Sn-Doped In2O3 nanorods and its relationship with a dislocation-driven growth mechanism
dc.typejournal article
dc.volume.number115
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dspace.entity.typePublication
relation.isAuthorOfPublication43cbf291-2f80-4902-8837-ea2a9ffaa702
relation.isAuthorOfPublicationda0d631e-edbf-434e-8bfd-d31fb2921840
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscovery43cbf291-2f80-4902-8837-ea2a9ffaa702

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