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Growth and interface engineering of highly strained low bandgap group IV semiconductors

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dc.contributor.authorWirths, S.
dc.contributor.authorPampillón Arce, María Ángela
dc.contributor.authorSan Andrés Serrano, Enrique
dc.contributor.authorStarge, D.
dc.contributor.authorTiedemann, A.T.
dc.contributor.authorMussler, G.
dc.contributor.authorFox, A.
dc.contributor.authorBreuer, U.
dc.contributor.authorHartmann, J-M.
dc.contributor.authorMantl, S.
dc.contributor.authorBuca, D.
dc.date.accessioned2023-06-19T14:56:28Z
dc.date.available2023-06-19T14:56:28Z
dc.date.issued2014
dc.description© 2014 IEEE. International Silicon-Germanium Technology and Device Meeting (ISTDM) (7. 2014. Singapore).
dc.description.abstractHighly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/33320
dc.identifier.doi10.1109/istdm.2014.6874645
dc.identifier.officialurlhttp://dx.doi.org/10.1109/istdm.2014.6874645
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/34882
dc.journal.title2014 7th International Silicon-Germanium Technology and device meetinTING (ISTDM)
dc.language.isoeng
dc.page.final14
dc.page.initial13
dc.publisherIEEE
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleGrowth and interface engineering of highly strained low bandgap group IV semiconductors
dc.typejournal article
dcterms.references[1] R. Pillarisetty, Nature, 479, 324 (2011). [2] G. Han, P. Guo, Y. Yang, C. Zhan, Q. Zhou, Y.-C. Yeo, Appl. Phys. Lett., 98, 153502 (2011). [3] M. V. Fischetti, S.E. Laux, J. Appl. Phys., 80, 2234 (1996). [4] S. Wirths, A.T. Tiedemann, Z. Ikonic, P. Harrison, B. Holländer, T. Stoica, G. Mussler, M. Myronov, J.M. Hartmann, D. Grützmacher, D. Buca, S. Mantl, Appl. Phys. Lett., 102, 192103 (2013).
dspace.entity.typePublication
relation.isAuthorOfPublication21e27519-52b3-488f-9a2a-b4851af89a71
relation.isAuthorOfPublication.latestForDiscovery21e27519-52b3-488f-9a2a-b4851af89a71

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