Scanning tunnelling spectroscopy characterization of ZnO single crystals
| dc.contributor.author | Urbieta Quiroga, Ana Irene | |
| dc.contributor.author | Fernández Sánchez, Paloma | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Sekiguchi, T. | |
| dc.date.accessioned | 2023-06-20T19:01:29Z | |
| dc.date.available | 2023-06-20T19:01:29Z | |
| dc.date.issued | 2001-07 | |
| dc.description | © 2001 IOP Publishing Ltd. This work was supported by MCYT –DGI (ProjectMAT2000-2119). Thanks are due to Professor N Sakagami (Akita National College of Technology, Japan) and Professor S Miyashita (Toyama Medical and Pharmaceutical University, Japan) for their contribution to crystal preparation. | |
| dc.description.abstract | Bulk ZnO single crystals grown by the hydrothermal and flux methods have been characterized by scanning tunnelling spectroscopy performed in the different crystalline faces. Normalized differential conductance has been found to depend on the face considered. Polar O-terminated surfaces show an intrinsic conduction behaviour and surface bandgap in the range 0.4-0.8 eV, which depends on the position probed. The Zn polar surfaces show mainly n-type conduction. The non-polar m regions present either intrinsic or p-type behaviour. The differences observed are attributed to the nature of impurities and defects appearing in the polar and non-polar surfaces during crystal growth. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | MCYT–DGI | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26303 | |
| dc.identifier.doi | 10.1088/0268-1242/16/7/311 | |
| dc.identifier.issn | 0268-1242 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1088/0268-1242/16/7/311 | |
| dc.identifier.relatedurl | http://iopscience.iop.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59124 | |
| dc.issue.number | 7 | |
| dc.journal.title | Semiconductor Science and Technology | |
| dc.language.iso | eng | |
| dc.page.final | 593 | |
| dc.page.initial | 589 | |
| dc.publisher | IOP Publishing Ltd | |
| dc.relation.projectID | MAT2000-2119 | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Tunneling Spectroscopy | |
| dc.subject.keyword | Zinc-Oxide | |
| dc.subject.keyword | Electronic-Structure | |
| dc.subject.keyword | Si(111)2x1 Surface | |
| dc.subject.keyword | Microscopy | |
| dc.subject.keyword | Ceramics | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Scanning tunnelling spectroscopy characterization of ZnO single crystals | |
| dc.type | journal article | |
| dc.volume.number | 16 | |
| dcterms.references | [1] Reynolds D C, Look D C and Jogai B 1996 Solid State Commun. 99 873 [2] Zu P, Tang Z K, Wong G K L, Kawasaki M, Ohtomo A, Koinuma H and Segawa Y 1997 Solid State Commun. 103 459 [3] Park Y S and Reynolds D C 1967 J. Appl. Phys. 38 756 [4] Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton CW, Cantwell G and Harsch W C 1998 Solid State Commun. 150 399 [5] Sakagami N and Shibayama K 1981 Japan. J. Appl. Phys. 20 201 [6] Ohashi N, Ohgaki T, Nakata T, Tsurumi T, Sekiguchi T, Haneda H and Tanaka J 1999 J. Korean Phys. Soc. 35 S287 [7] Sekiguchi T, Miyashita S, Obara K, Shishido T and Sakagami N 2000 J. Cryst. Growth 214/215 72 [8] Sekiguchi T, Ohashi N and Terada Y 1997 Japan. J. Appl. Phys. 36 L289 [9] Thidabo P M, Rohrer G S and Bonnell D A 1994 Surf. Sci. 318 379 [10] Asenjo A, Buend´ıa A, G´omez Rodr´ıguez J M and Baró A 1994 J. Vac. Sci. Technol. B 12 1658 [11] Hamers R J, Tromp R M and Demuth J E 1986 Phys. Rev. Lett. 56 1972 [12] Feenstra R M 1994 Surf. Sci. 299–300 965 [13] Stroscio J A, Feenstra R M and Fein A P 1986 Phys. Rev. Lett. 57 2579 [14] Lang N D 1986 Phys. Rev. B 34 5947 [15] Feenstra R M, Stroscio J A and Fein A P 1987 Surf. Sci. 181 295 [16] Mariano A N and Hanneman R E 1963 J. Appl. Phys. 34 384 [17] Bonnell D A and Clarke D R 1988 J. Am. Ceram. Soc. 71 629 [18] Rohrer G S and Bonnell D A 1990 J. Am. Ceram. Soc. 73 3026 [19] Rohrer G S and Bonnell D A 1991 J. Vac. Sci. Technol. B 9 783 [20] Díaz-Guerra C and Piqueras J 1999 J. Appl. Phys. 86 1874 [21] Wang B G, Shi E W and Zhong W Z 1997 Cryst. Res. Technol. 32 659 | |
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