Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

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dc.contributor.authorOlea Ariza, Javier
dc.contributor.authorLópez, E.
dc.contributor.authorAntolín, E.
dc.contributor.authorMartí, A.
dc.contributor.authorLuque Uria, Álvaro
dc.contributor.authorGarcía Hemme, Eric
dc.contributor.authorPastor, D.
dc.contributor.authorGarcía Hernansanz, Rodrigo
dc.contributor.authorPrado Millán, Álvaro Del
dc.contributor.authorGonzález Díaz, Germán
dc.date.accessioned2023-06-18T06:56:45Z
dc.date.available2023-06-18T06:56:45Z
dc.date.issued2016-02-10
dc.description© 2016 IOP Publishing Ltd. The authors would like to acknowledge the C A I de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations, the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements and Dr J P González García from CIEMAT for reflectance measurements. Research by E García-Hemme was supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J Olea acknowledges financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402), under which this research was undertaken. D Pastor acknowledges the financial support to the grant EX-2010-0662 from the Spanish Science Ministry. This work was partially supported by the Spanish MINECO (Economic and Competitiviness Ministery) through grant TEC 2013-41730-R. The authors acknowledge the financial support from la Comunidad de Madrid throughout the funding of the project, MADRID-PV (S2013/MAE-2780).
dc.description.abstractSilicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.sponsorshipMinisterio de Ciencia e Innovación (MICINN)
dc.description.sponsorshipComunidad de Madrid
dc.description.sponsorshipCampus de Excelencia Internacional Moncloa UCM-UPM
dc.description.sponsorshipPICATA Programa Internacional de Captación de Talento Convocatorias Campus Moncloa
dc.description.sponsorshipAyudas para contratos Juan de la Cierva (MICINN)
dc.description.sponsorshipMinisterio de Ciencia y Tecnología (MCYT), España
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/39343
dc.identifier.doi10.1088/0022-3727/49/5/055103
dc.identifier.issn0022-3727
dc.identifier.officialurlhttp://dx.doi.org/10.1088/0022-3727/49/5/055103
dc.identifier.relatedurlhttp://iopscience.iop.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/24643
dc.issue.number5
dc.journal.titleJournal of physics D: applied physics
dc.language.isoeng
dc.publisherIOP Publishing Ltd
dc.relation.projectIDJCI-2011-10402
dc.relation.projectIDMADRID-PV (S2013/MAE-2780)
dc.relation.projectIDEX-2010-0662
dc.relation.projectIDTEC 2013-41730-R
dc.rightsAtribución 3.0 España
dc.rights.accessRightsopen access
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/es/
dc.subject.cdu537
dc.subject.keywordSilicon
dc.subject.keywordSupersaturated
dc.subject.keywordTitanium
dc.subject.keywordPhotoresponse
dc.subject.ucmElectricidad
dc.subject.ucmElectromagnetismo
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.subject.unesco2202 Electromagnetismo
dc.titleRoom temperature photo-response of titanium supersaturated silicon at energies over the bandgap
dc.typejournal article
dc.volume.number49
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